具有二阶补偿的低功率无运放带隙基准

2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC) Pub Date : 2017-10-01 DOI:10.1109/EDSSC.2017.8126434

Xiaoxin Guo, M. Cai, Xiaoyong He

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引用次数: 0

摘要

本文提出了一种低温度系数的二阶无运量补偿带隙基准。带隙由MOSFET阈值电压的温度系数进行二阶曲率补偿。通过Spectre仿真，输出参考电压为1.102V，温度系数为2.7ppm，温度范围为- 40°C至160°C，低频时PSRR为- 60dB。整个电路的电流损耗为16μA。布局面积0.029mm2。

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A low power op-ampless bandgap reference with second-order compensation

An op-ampless second-order compensated bandgap reference with low temperature coefficient is proposed in this paper. The bandgap is second-order curvature-compensated by the temperature coefficient of the threshold voltage of a MOSFET. Simulated by Spectre, the output reference voltage is 1.102V with a 2.7ppm temperature coefficient from −40 °C to 160 °C and a −60dB PSRR at low frequency. The current dissipation of the whole circuit is 16μA. The layout area is 0.029mm2.

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2017 International Conference on Electron Devices and Solid-State Circuits (EDSSC)

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