平面(二维)和垂直集成(三维)高性能集成电路的全芯片热分析

Sungjun Im, Kaustav Banerjee
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引用次数: 223

摘要

本文基于ITRS '99的技术、结构和材料数据,对二维高性能集成电路进行了全面的芯片热分析。根据ITRS,先进技术节点中的互连焦耳加热可以强烈影响二维芯片内最高温度的大小,尽管芯片功率密度的变化可以忽略不计。这一结果已被证明对ITRS无法预见的互连可靠性和性能具有重大影响。此外,利用解析建模和数值模拟对垂直集成集成电路进行了详细的热分析。此外,还首次利用ITRS数据比较了两种可选的三维技术的热设计。
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Full chip thermal analysis of planar (2-D) and vertically integrated (3-D) high performance ICs
This work presents a full chip thermal analysis of 2-D high performance ICs based on technological, structural, and material data from ITRS '99. It is shown that interconnect Joule heating in advanced technology nodes can strongly impact the magnitude of the maximum temperature within 2-D chips despite negligible change in the chip power density, as per the ITRS. This result has been shown to have significant implications for interconnect reliability and performance not foreseeable by the ITRS. Furthermore, detailed thermal analysis of vertically integrated (3-D) ICs has been carried out using analytical modeling and numerical simulations. Additionally, comparison between the thermal design of two alternative 3-D technologies has been presented for the first time using ITRS data.
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