宽带次谐波混频器与一个紧凑的带通滤波器

S. Hung, Kai-Wen Cheng, Yeong-Her Wang
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引用次数: 8

摘要

本文提出了一种采用0.15 μm GaAs pHEMT工艺,芯片尺寸为1.8 × 0.76 mm2的28 GHz至72 GHz隔离增强下变频宽带次谐波混频器。亚谐波混频器的结构包括一个中频放大器、一个紧凑型带通滤波器和一个利用反并联二极管对(APDP)的兰格耦合器。为了减小线路长度和实现更宽的工作带宽,所提出的带通滤波器接地电容还可以增强次谐波混频器的本振(LO)-射频(RF)隔离。在中频放大器中,本LO和RF-IF之间可以实现高转换增益和隔离。测量结果表明,在本端功率为9 dBm时,该混频器在28ghz ~ 72ghz的射频范围内的转换增益为5.02 ~ 11.5 dB;RF-IF、LO-IF、LO-RF和2LO-RF的隔离度分别为21 dB ~ 51.52 dB、22.13 dB ~ 30.97 dB、10.64 dB ~ 27.9 dB和48.9 dB ~ 72.35 dB。
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Broadband sub-harmonic mixer with a compact band pass filter
This paper presents a 28 GHz to 72 GHz isolation enhanced down-conversion broadband sub-harmonic mixer using the 0.15 μm GaAs pHEMT process with chip dimensions of 1.8 × 0.76 mm2. The configuration of the sub-harmonic mixer consists of one intermediate frequency (IF) amplifier, one compact band pass filter, and one Lange coupler utilizing an anti-parallel diode pair (APDP). To reduce line length and achieve broad operation bandwidth, the proposed grounded capacitor in the band pass filter can also enhance the local oscillation (LO)-radio frequency (RF) isolation of the sub-harmonic mixer. Both high conversion gain and isolation can be achieved between LO and RF-IF in the IF amplifier. The measured results indicate that the conversion gain of the mixer is 5.02 dB to 11.5 dB from RF frequency of 28 GHz to 72 GHz at the LO power of 9 dBm; the isolation of RF-IF, LO-IF, LO-RF, and 2LO-RF is 21 dB to 51.52 dB, 22.13 dB to 30.97 dB, 10.64 dB to 27.9 dB, and 48.9 dB to 72.35 dB, respectively.
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