{"title":"探索npn和pnp SiGe hts中的热载流子现象","authors":"P. Cheng, A. Appaswamy, M. Bellini, J. Cressler","doi":"10.1109/SMIC.2008.20","DOIUrl":null,"url":null,"abstract":"A new method for analyzing breakdown phenomena and differentiating between damage created by hot electrons and hot holes under impact ionization induced stress within SiGe HBTs is presented. Measurements demonstrate that electrons are more effective than holes for creating impact ionization induced damage under mixed-mode stress. Lucky electrons and lucky holes can be directly observed using this approach, and the induced hot carrier current yields important insight into understanding reliability of SiGe HBTs under aggressive stress.","PeriodicalId":350325,"journal":{"name":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","volume":"18 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-02-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs\",\"authors\":\"P. Cheng, A. Appaswamy, M. Bellini, J. Cressler\",\"doi\":\"10.1109/SMIC.2008.20\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new method for analyzing breakdown phenomena and differentiating between damage created by hot electrons and hot holes under impact ionization induced stress within SiGe HBTs is presented. Measurements demonstrate that electrons are more effective than holes for creating impact ionization induced damage under mixed-mode stress. Lucky electrons and lucky holes can be directly observed using this approach, and the induced hot carrier current yields important insight into understanding reliability of SiGe HBTs under aggressive stress.\",\"PeriodicalId\":350325,\"journal\":{\"name\":\"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"volume\":\"18 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-02-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMIC.2008.20\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMIC.2008.20","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Probing Hot Carrier Phenomena in npn and pnp SiGe HBTs
A new method for analyzing breakdown phenomena and differentiating between damage created by hot electrons and hot holes under impact ionization induced stress within SiGe HBTs is presented. Measurements demonstrate that electrons are more effective than holes for creating impact ionization induced damage under mixed-mode stress. Lucky electrons and lucky holes can be directly observed using this approach, and the induced hot carrier current yields important insight into understanding reliability of SiGe HBTs under aggressive stress.
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