{"title":"体和约束结构中复杂能带结构的计算","authors":"S. E. Laux","doi":"10.1109/IWCE.2009.5091095","DOIUrl":null,"url":null,"abstract":"Complex bands are computed for Si using a spds* atomistic tight binding Hamiltonian with spin orbit splitting for both bulk and confined structures. Representative band structures are shown. The bulk Si calculations imply that band-toband tunneling current should be less in the [1 0 0] direction compared to either [1 1 0] or [1 1 1] directions, which is qualitatively consistent with experiment.","PeriodicalId":443119,"journal":{"name":"2009 13th International Workshop on Computational Electronics","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-05-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Computation of Complex Band Structures in Bulk and Confined Structures\",\"authors\":\"S. E. Laux\",\"doi\":\"10.1109/IWCE.2009.5091095\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Complex bands are computed for Si using a spds* atomistic tight binding Hamiltonian with spin orbit splitting for both bulk and confined structures. Representative band structures are shown. The bulk Si calculations imply that band-toband tunneling current should be less in the [1 0 0] direction compared to either [1 1 0] or [1 1 1] directions, which is qualitatively consistent with experiment.\",\"PeriodicalId\":443119,\"journal\":{\"name\":\"2009 13th International Workshop on Computational Electronics\",\"volume\":\"72 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2009-05-27\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2009 13th International Workshop on Computational Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2009.5091095\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 13th International Workshop on Computational Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2009.5091095","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Computation of Complex Band Structures in Bulk and Confined Structures
Complex bands are computed for Si using a spds* atomistic tight binding Hamiltonian with spin orbit splitting for both bulk and confined structures. Representative band structures are shown. The bulk Si calculations imply that band-toband tunneling current should be less in the [1 0 0] direction compared to either [1 1 0] or [1 1 1] directions, which is qualitatively consistent with experiment.
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