{"title":"用于电路仿真的SiC jfet SPICE模型","authors":"Yi Wang, C. Cass, T. Chow, F. Wang, D. Boroyevich","doi":"10.1109/COMPEL.2006.305677","DOIUrl":null,"url":null,"abstract":"This paper presents SPICE model for one kind of high voltage transistors-1200 V, 5A SiC JFET. Temperature dependent characterization of the device has been done up to 200 degC. Switching behavior has also been studied at 600 V, 5 A level. Based on both static and dynamic characterizations, this paper focuses on SPICE modeling work of such a device for circuit simulations. The model parameters have been extracted from experimental plots. Simulations are then used to verify the developed compact model. Reasonably good agreement has been obtained between the model and experimental results","PeriodicalId":210889,"journal":{"name":"2006 IEEE Workshops on Computers in Power Electronics","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-07-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"21","resultStr":"{\"title\":\"SPICE Model of SiC JFETs for Circuit Simulations\",\"authors\":\"Yi Wang, C. Cass, T. Chow, F. Wang, D. Boroyevich\",\"doi\":\"10.1109/COMPEL.2006.305677\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper presents SPICE model for one kind of high voltage transistors-1200 V, 5A SiC JFET. Temperature dependent characterization of the device has been done up to 200 degC. Switching behavior has also been studied at 600 V, 5 A level. Based on both static and dynamic characterizations, this paper focuses on SPICE modeling work of such a device for circuit simulations. The model parameters have been extracted from experimental plots. Simulations are then used to verify the developed compact model. Reasonably good agreement has been obtained between the model and experimental results\",\"PeriodicalId\":210889,\"journal\":{\"name\":\"2006 IEEE Workshops on Computers in Power Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-07-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"21\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 IEEE Workshops on Computers in Power Electronics\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/COMPEL.2006.305677\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 IEEE Workshops on Computers in Power Electronics","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/COMPEL.2006.305677","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 21
摘要
本文介绍了一种高压晶体管——1200v, 5A SiC JFET的SPICE模型。该装置的温度相关特性已经完成了高达200摄氏度。在600v, 5a水平下也研究了开关行为。在静态和动态两方面的基础上，重点研究了该器件的SPICE建模工作。模型参数是从试验田提取的。然后用仿真来验证所开发的紧凑模型。模型与实验结果吻合较好
This paper presents SPICE model for one kind of high voltage transistors-1200 V, 5A SiC JFET. Temperature dependent characterization of the device has been done up to 200 degC. Switching behavior has also been studied at 600 V, 5 A level. Based on both static and dynamic characterizations, this paper focuses on SPICE modeling work of such a device for circuit simulations. The model parameters have been extracted from experimental plots. Simulations are then used to verify the developed compact model. Reasonably good agreement has been obtained between the model and experimental results
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