P. Fazan, V. K. Mathews, N. Sandler, G. Lo, D. Kwong
{"title":"一种高c电容器(20.4 fF/ μ m/sup 2/)，超薄CVD-Ta/sub 2/O/sub 5/薄膜沉积在坚固的多晶硅上，用于高密度dram","authors":"P. Fazan, V. K. Mathews, N. Sandler, G. Lo, D. Kwong","doi":"10.1109/IEDM.1992.307356","DOIUrl":null,"url":null,"abstract":"Storage capacitors integrating ultrathin chemical vapor deposited-Ta/sub 2/O/sub 5/ (10 to 15 nm thick) on rapid thermal nitrided rugged polycrystalline silicon electrodes are proposed for 256 Mb stacked dynamic random access memory applications. The unique combination of this high dielectric constant material with a rugged hemispherical grain silicon electrode allows the manufacture of the ultra high capacitance (20.4 fF/ mu m/sup 2/) stacked structures needed beyond 64 Mb.<<ETX>>","PeriodicalId":287098,"journal":{"name":"1992 International Technical Digest on Electron Devices Meeting","volume":"22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A high-C capacitor (20.4 fF/ mu m/sup 2/) with ultrathin CVD-Ta/sub 2/O/sub 5/ films deposited on rugged poly-Si for high density DRAMs\",\"authors\":\"P. Fazan, V. K. Mathews, N. Sandler, G. Lo, D. Kwong\",\"doi\":\"10.1109/IEDM.1992.307356\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Storage capacitors integrating ultrathin chemical vapor deposited-Ta/sub 2/O/sub 5/ (10 to 15 nm thick) on rapid thermal nitrided rugged polycrystalline silicon electrodes are proposed for 256 Mb stacked dynamic random access memory applications. The unique combination of this high dielectric constant material with a rugged hemispherical grain silicon electrode allows the manufacture of the ultra high capacitance (20.4 fF/ mu m/sup 2/) stacked structures needed beyond 64 Mb.<<ETX>>\",\"PeriodicalId\":287098,\"journal\":{\"name\":\"1992 International Technical Digest on Electron Devices Meeting\",\"volume\":\"22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1992 International Technical Digest on Electron Devices Meeting\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.1992.307356\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1992 International Technical Digest on Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1992.307356","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
摘要
在快速热氮化坚固多晶硅电极上集成超薄化学气相沉积- ta /sub 2/O/sub 5/ (10 ~ 15nm厚)的存储电容器可用于256mb堆叠动态随机存取存储器应用。这种高介电常数材料与坚固的半球形颗粒硅电极的独特组合允许制造超过64 Mb所需的超高电容(20.4 fF/ mu m/sup 2/)堆叠结构。
A high-C capacitor (20.4 fF/ mu m/sup 2/) with ultrathin CVD-Ta/sub 2/O/sub 5/ films deposited on rugged poly-Si for high density DRAMs
Storage capacitors integrating ultrathin chemical vapor deposited-Ta/sub 2/O/sub 5/ (10 to 15 nm thick) on rapid thermal nitrided rugged polycrystalline silicon electrodes are proposed for 256 Mb stacked dynamic random access memory applications. The unique combination of this high dielectric constant material with a rugged hemispherical grain silicon electrode allows the manufacture of the ultra high capacitance (20.4 fF/ mu m/sup 2/) stacked structures needed beyond 64 Mb.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
