K. Kanazawa, M. Kazumura, S. Nambu, G. Kanô, I. Teramoto
{"title":"一种用于UHF接收器前端的GaAs双平衡双栅FET混频器IC","authors":"K. Kanazawa, M. Kazumura, S. Nambu, G. Kanô, I. Teramoto","doi":"10.1109/MCS.1985.1113640","DOIUrl":null,"url":null,"abstract":"A double-balanced dual-gate FET mixer has been developed aiming at the application to a front-end circuit of the UHF receivers. An experimental IC has exhibited a 6 - 8 dB conversion gain without matching over a wide frequency range from 100 MHz to 800 MHz with the well suppressed RF/LO feedthough by more than 20 dB and third-order intermodulation product of -60 dB.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"11 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A GaAs Double-Balanced Dual-Gate FET Mixer IC for UHF Receiver Front-End Applications\",\"authors\":\"K. Kanazawa, M. Kazumura, S. Nambu, G. Kanô, I. Teramoto\",\"doi\":\"10.1109/MCS.1985.1113640\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A double-balanced dual-gate FET mixer has been developed aiming at the application to a front-end circuit of the UHF receivers. An experimental IC has exhibited a 6 - 8 dB conversion gain without matching over a wide frequency range from 100 MHz to 800 MHz with the well suppressed RF/LO feedthough by more than 20 dB and third-order intermodulation product of -60 dB.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"11 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1985.1113640\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1985.1113640","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A GaAs Double-Balanced Dual-Gate FET Mixer IC for UHF Receiver Front-End Applications
A double-balanced dual-gate FET mixer has been developed aiming at the application to a front-end circuit of the UHF receivers. An experimental IC has exhibited a 6 - 8 dB conversion gain without matching over a wide frequency range from 100 MHz to 800 MHz with the well suppressed RF/LO feedthough by more than 20 dB and third-order intermodulation product of -60 dB.
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