固溶体的形成:改善方角石的热电性能

A. Borshchevsky, T. Caillat, J. Fleurial
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引用次数: 27

摘要

方钨矿半导体具有吸引人的输运性质,具有实现高热电性能ZT的良好潜力。CoSb/sub - 3/等二元方钨矿化合物的电阻率较低,塞贝克系数中等至较大。然而,它们的热导率太高(100至150 /spl倍/10/sup -3/ Wcm/sup -1/K/sup -1/ 300 K),无法实现高ZT值。众所周知,固溶体或合金化的形成可以大大降低半导体的晶格热导率。由于存在大量的方角石化合物、固溶体和相关相,这些材料为在特定温度范围内优化热学和电学性能提供了许多可能性。概述了方角铁矿固溶体的形成。结果表明,在原子质量和体积波动最大的情况下,可以实现导热系数的大幅度降低,并讨论了实现高ZT值的可能性。
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Solid solution formation: improving the thermoelectric properties of skutterudites
Skutterudite semiconductors possess attractive transport properties and have a good potential for achieving high thermoelectric figures of merit, ZT. Low electrical resistivities and moderate to large Seebeck coefficients are obtained in binary skutterudite compounds such as CoSb/sub 3/. However, their thermal conductivities are too high (100 to 150 /spl times/10/sup -3/ Wcm/sup -1/K/sup -1/ at 300 K) to achieve high ZT values. It is well known that the formation of solid solutions, or alloying, can substantially reduce the lattice thermal conductivity of semiconductors. Because a large number of skutterudite compounds, solid solutions and related phases exist, these materials offer many possibilities for optimizing the thermal and electrical properties to a specific range of temperature. An overview of the formation of skutterudite solid solutions is given. It is shown that a substantial decrease of thermal conductivity can be achieved in cases where the fluctuations of atomic masses and volumes can be maximized and the possibility of achieving high ZT values is discussed.
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