用于毫米波应用的v波段BiCMOS功率探测器

2013 25th International Conference on Microelectronics (ICM) Pub Date : 2013-12-01 DOI:10.1109/ICM.2013.6735000

A. Serhan, E. Lauga-Larroze, J. Fournier

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引用次数: 5

摘要

本文设计了一种v波段双cmos 55nm功率探测器，用于毫米波电路的自动电平控制(ALC)和内置自检(BIST)。该探测器在50 GHz ~ 90 GHz频段的模拟探测范围约为35 dB。由于使用共基双极晶体管作为输入级，对-30 dBm输入功率的灵敏度得到了证明。描述了设计和优化步骤，以提供设计高性能功率探测器的一般方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A V-Band BiCMOS power detector for millimeter-wave applications

This paper presents a V-Band Bi-CMOS 55nm power detector designed to be used in mmWave circuits for automatic level control (ALC) and built-in self test (BIST). The proposed detector shows a simulated detection range of about 35 dB in the 50 GHz to 90 GHz frequency band. Sensitivity to -30 dBm input power is demonstrated thanks to the use of common base bipolar transistor as input stage. The design and optimization steps are described in order to provide a general methodology to design high performance power detectors.

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2013 25th International Conference on Microelectronics (ICM)

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