高能物理硅传感器的器件工程和位移损伤:思想、策略、观点和成就的演变

G. Laštovička-Medin
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引用次数: 0

摘要

本文对在恶劣辐射环境下位移损伤对硅探测器的影响进行了展望。此外,概述了第二阶段LHC-HL探测器升级的候选最新的最先进的传感器技术。
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Device Engineering and Displacement Damage in Si-Sensors for High Energy Physics: Evolution of Ideas, Strategies, Perspectives and Achievements
In this paper, an outlook on the effects of displacement damage in Silicon detectors under harsh radiation environment is given. Furthermore, the most resent state-of-the-art sensor technologies which are candidates for an upgrade of the LHC-HL detectors for Phase II are outlined.
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