{"title":"具有增益控制的低噪声分布式放大器","authors":"C. Hutchinson, W. Kennan","doi":"10.1109/MCS.1987.1114529","DOIUrl":null,"url":null,"abstract":"A 2 to 18GHz monolithic GaAs distributed amplifier has been developed with 17dB nominal gain, less than 2.0:1 input and output VSWR, less than 6.0dB noise figure, and greater than 40dB gain control . The chip size at 3.0 sq. mm. (1.63mm by 1.88mm) makes it cost effective for a wide variety of applications.","PeriodicalId":231710,"journal":{"name":"Microwave and Millimeter-Wave Monolithic Circuits","volume":"7 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Low Noise Distributed Amplifier with Gain Control\",\"authors\":\"C. Hutchinson, W. Kennan\",\"doi\":\"10.1109/MCS.1987.1114529\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A 2 to 18GHz monolithic GaAs distributed amplifier has been developed with 17dB nominal gain, less than 2.0:1 input and output VSWR, less than 6.0dB noise figure, and greater than 40dB gain control . The chip size at 3.0 sq. mm. (1.63mm by 1.88mm) makes it cost effective for a wide variety of applications.\",\"PeriodicalId\":231710,\"journal\":{\"name\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"volume\":\"7 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microwave and Millimeter-Wave Monolithic Circuits\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MCS.1987.1114529\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microwave and Millimeter-Wave Monolithic Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MCS.1987.1114529","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A Low Noise Distributed Amplifier with Gain Control
A 2 to 18GHz monolithic GaAs distributed amplifier has been developed with 17dB nominal gain, less than 2.0:1 input and output VSWR, less than 6.0dB noise figure, and greater than 40dB gain control . The chip size at 3.0 sq. mm. (1.63mm by 1.88mm) makes it cost effective for a wide variety of applications.
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