{"title":"半导体纳米器件中电子传输量子势谱的鲁棒设计","authors":"Jun Zhang, R. Kosut","doi":"10.23919/ECC.2007.7068650","DOIUrl":null,"url":null,"abstract":"In this paper we address the robust design of the quantum potential profile in a in semiconductor nanodevice to achieve a desired electron transmission coefficient vs. bias voltage characteristic despite uncertainty. We formulate an optimization problem which is solved locally via a sequential linear program.","PeriodicalId":407048,"journal":{"name":"2007 European Control Conference (ECC)","volume":"177 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Robust design of quantum potential profile for electron transmission in semiconductor nanodevices\",\"authors\":\"Jun Zhang, R. Kosut\",\"doi\":\"10.23919/ECC.2007.7068650\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we address the robust design of the quantum potential profile in a in semiconductor nanodevice to achieve a desired electron transmission coefficient vs. bias voltage characteristic despite uncertainty. We formulate an optimization problem which is solved locally via a sequential linear program.\",\"PeriodicalId\":407048,\"journal\":{\"name\":\"2007 European Control Conference (ECC)\",\"volume\":\"177 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2007-07-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2007 European Control Conference (ECC)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ECC.2007.7068650\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 European Control Conference (ECC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ECC.2007.7068650","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Robust design of quantum potential profile for electron transmission in semiconductor nanodevices
In this paper we address the robust design of the quantum potential profile in a in semiconductor nanodevice to achieve a desired electron transmission coefficient vs. bias voltage characteristic despite uncertainty. We formulate an optimization problem which is solved locally via a sequential linear program.
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