聚酰亚胺上srtio3薄膜超薄去耦电容器

S. Yamamichi, A. Shibuya
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引用次数: 0

摘要

研制了超薄去耦电容器器件,其厚度和体积分别为传统陶瓷电容器的七分之一和三分之一。低温沉积高介电常数srtio3薄膜和柔性聚酰亚胺薄膜作为基材,使电容器的体积大大减小。锰杂质掺杂srtio3提高了电容器的可靠性,钼基电极成功地防止了聚酰亚胺薄膜的收缩。该电容器具有3.2 nF/mm2的大电容密度,在10V时漏电流为10-7A/cm2,厚度仅为40 μm。该电容器装置适用于开发环保电子产品。
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An Ultra-Thin Decoupling Capacitor with SrTiO3thin film on polyimide
An ultra-thin decoupling capacitor device has been developed, and its thickness and volume are one-seventh and one-third of those of conventional ceramics capacitors, respectively. Low temperature deposition of high dielectric constant SrTiO3thin film and flexible polyimide film as a base material make the capacitor smaller drastically. Mn impurity doping into SrTiO3improves the capacitor reliability and Mo-based electrode successfully prevents the polyimide film contraction. The capacitor shows a large capacitance density of 3.2 nF/mm2, and low leakage current of 10-7A/cm2at 10V with only a 40 μm thickness. This capacitor device is suitable for developing eco-friendly electronic products.
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