{"title":"新型大功率、高亮度二极管激光器结构的数值模拟","authors":"K. Boucke","doi":"10.1109/ISLC.2000.882308","DOIUrl":null,"url":null,"abstract":"The diode laser simulation is based on a Fox and Li type resonator calculation taking into account the nonlinear semiconductor medium between rear and front facette of the diode laser. The tracing of the time evolution of the optical field is replaced by an iterative approximation of the steady state of the system. The fundamental equations of the numerical model are the Helmholtz equation for the electrical field distribution and the carrier diffusion equation, coupled by the complex index of refraction and the nonlinear gain function.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Numerical simulations of new high-power, high-brightness diode laser structures\",\"authors\":\"K. Boucke\",\"doi\":\"10.1109/ISLC.2000.882308\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The diode laser simulation is based on a Fox and Li type resonator calculation taking into account the nonlinear semiconductor medium between rear and front facette of the diode laser. The tracing of the time evolution of the optical field is replaced by an iterative approximation of the steady state of the system. The fundamental equations of the numerical model are the Helmholtz equation for the electrical field distribution and the carrier diffusion equation, coupled by the complex index of refraction and the nonlinear gain function.\",\"PeriodicalId\":322366,\"journal\":{\"name\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2000.882308\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882308","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Numerical simulations of new high-power, high-brightness diode laser structures
The diode laser simulation is based on a Fox and Li type resonator calculation taking into account the nonlinear semiconductor medium between rear and front facette of the diode laser. The tracing of the time evolution of the optical field is replaced by an iterative approximation of the steady state of the system. The fundamental equations of the numerical model are the Helmholtz equation for the electrical field distribution and the carrier diffusion equation, coupled by the complex index of refraction and the nonlinear gain function.
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