V. Grimalsky, S. Koshevaya, J. Escobedo-A., I. Moroz
{"title":"任意掺杂n-Si中量子线的电子能谱","authors":"V. Grimalsky, S. Koshevaya, J. Escobedo-A., I. Moroz","doi":"10.1109/ELNANO.2018.8477560","DOIUrl":null,"url":null,"abstract":"Electron spectrum in doped $n$-Si quantum wires is calculated by the Thomas – Fermi (TF) method under finite temperatures. The many-body exchange corrections are taken into account. The doping profile is arbitrary. At the first stage the electron potential energy is calculated from a simple two-dimensional equation. The effective iteration scheme is proposed there. Then the energy sub-levels and wave functions are simulated from the Schrödinger equation. The expansion by the eigenfunctions of the linear harmonic oscillator is used. The quantum mechanical perturbation theory yields goods results for the lower energy sub-levels.","PeriodicalId":269665,"journal":{"name":"2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"The Electron Spectrum of Quantum Wires in n-Si of Arbitrarily Doping Profile\",\"authors\":\"V. Grimalsky, S. Koshevaya, J. Escobedo-A., I. Moroz\",\"doi\":\"10.1109/ELNANO.2018.8477560\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Electron spectrum in doped $n$-Si quantum wires is calculated by the Thomas – Fermi (TF) method under finite temperatures. The many-body exchange corrections are taken into account. The doping profile is arbitrary. At the first stage the electron potential energy is calculated from a simple two-dimensional equation. The effective iteration scheme is proposed there. Then the energy sub-levels and wave functions are simulated from the Schrödinger equation. The expansion by the eigenfunctions of the linear harmonic oscillator is used. The quantum mechanical perturbation theory yields goods results for the lower energy sub-levels.\",\"PeriodicalId\":269665,\"journal\":{\"name\":\"2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ELNANO.2018.8477560\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE 38th International Conference on Electronics and Nanotechnology (ELNANO)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ELNANO.2018.8477560","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The Electron Spectrum of Quantum Wires in n-Si of Arbitrarily Doping Profile
Electron spectrum in doped $n$-Si quantum wires is calculated by the Thomas – Fermi (TF) method under finite temperatures. The many-body exchange corrections are taken into account. The doping profile is arbitrary. At the first stage the electron potential energy is calculated from a simple two-dimensional equation. The effective iteration scheme is proposed there. Then the energy sub-levels and wave functions are simulated from the Schrödinger equation. The expansion by the eigenfunctions of the linear harmonic oscillator is used. The quantum mechanical perturbation theory yields goods results for the lower energy sub-levels.