I. Stavarache, L. Nedelcu, V. Teodorescu, V. Maraloiu, I. Dascalescu, M. Ciurea
{"title":"近红外扩展光响应的SiO2基GeSi纳米晶","authors":"I. Stavarache, L. Nedelcu, V. Teodorescu, V. Maraloiu, I. Dascalescu, M. Ciurea","doi":"10.1109/SMICND.2018.8539745","DOIUrl":null,"url":null,"abstract":"The films of SiGe nanocrystals in SiO2on Si substrate were obtained by co-sputtering Si, Ge, and SiO2followed by rapid thermal annealing. The films structure and morphology together with electrical and photoelectrical properties were studied by x-ray diffraction, transmission electron microscopy, current - voltage and spectral photocurrent measurements. The photocurrent spectra at 300, 200 and 100 K were correlated with results obtained from X-ray diffractograms and transmission electron microscopy. The photocurrent spectra show an extension in near infrared due to the enriching SiGe nanocrystals in Ge.","PeriodicalId":247062,"journal":{"name":"2018 International Semiconductor Conference (CAS)","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"GeSi Nanocrystals in SiO2 Matrix with Extended Photoresponse in Near Infrared\",\"authors\":\"I. Stavarache, L. Nedelcu, V. Teodorescu, V. Maraloiu, I. Dascalescu, M. Ciurea\",\"doi\":\"10.1109/SMICND.2018.8539745\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The films of SiGe nanocrystals in SiO2on Si substrate were obtained by co-sputtering Si, Ge, and SiO2followed by rapid thermal annealing. The films structure and morphology together with electrical and photoelectrical properties were studied by x-ray diffraction, transmission electron microscopy, current - voltage and spectral photocurrent measurements. The photocurrent spectra at 300, 200 and 100 K were correlated with results obtained from X-ray diffractograms and transmission electron microscopy. The photocurrent spectra show an extension in near infrared due to the enriching SiGe nanocrystals in Ge.\",\"PeriodicalId\":247062,\"journal\":{\"name\":\"2018 International Semiconductor Conference (CAS)\",\"volume\":\"16 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 International Semiconductor Conference (CAS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMICND.2018.8539745\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Semiconductor Conference (CAS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.2018.8539745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
GeSi Nanocrystals in SiO2 Matrix with Extended Photoresponse in Near Infrared
The films of SiGe nanocrystals in SiO2on Si substrate were obtained by co-sputtering Si, Ge, and SiO2followed by rapid thermal annealing. The films structure and morphology together with electrical and photoelectrical properties were studied by x-ray diffraction, transmission electron microscopy, current - voltage and spectral photocurrent measurements. The photocurrent spectra at 300, 200 and 100 K were correlated with results obtained from X-ray diffractograms and transmission electron microscopy. The photocurrent spectra show an extension in near infrared due to the enriching SiGe nanocrystals in Ge.
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