{"title":"光伏材料复合寿命的非接触测量","authors":"R. Ahrenkiel, S. Johnston","doi":"10.1109/PVSC.1997.653939","DOIUrl":null,"url":null,"abstract":"Contactless measurement of important semiconductor parameters has become a popular trend of current semiconductor technology. Here we describe an improved version of radio frequency photoconductive decay (RFPCD) operating in the ultra-high frequency (UHF) region. This work shows that the improved technique is capable of measuring samples ranging in size from submicron thin films to large silicon ingots. The UHF region is an ideal compromise for volume penetration and lifetime resolution with system response of 10 ns or less.","PeriodicalId":251166,"journal":{"name":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":"{\"title\":\"Contactless measurement of recombination lifetime in photovoltaic materials\",\"authors\":\"R. Ahrenkiel, S. Johnston\",\"doi\":\"10.1109/PVSC.1997.653939\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Contactless measurement of important semiconductor parameters has become a popular trend of current semiconductor technology. Here we describe an improved version of radio frequency photoconductive decay (RFPCD) operating in the ultra-high frequency (UHF) region. This work shows that the improved technique is capable of measuring samples ranging in size from submicron thin films to large silicon ingots. The UHF region is an ideal compromise for volume penetration and lifetime resolution with system response of 10 ns or less.\",\"PeriodicalId\":251166,\"journal\":{\"name\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"volume\":\"36 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1997-09-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"29\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1997.653939\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1997.653939","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Contactless measurement of recombination lifetime in photovoltaic materials
Contactless measurement of important semiconductor parameters has become a popular trend of current semiconductor technology. Here we describe an improved version of radio frequency photoconductive decay (RFPCD) operating in the ultra-high frequency (UHF) region. This work shows that the improved technique is capable of measuring samples ranging in size from submicron thin films to large silicon ingots. The UHF region is an ideal compromise for volume penetration and lifetime resolution with system response of 10 ns or less.
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