与高速SiGe BiCMOS技术兼容的高压HBTs

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI:10.1109/SMIC.2008.59

B. Geynet, P. Chevalier, S. Chouteau, G. Avenier, T. Schwartzmann, D. Gloria, G. Dambrine, F. Danneville, A. Chantre

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引用次数: 1

摘要

本文介绍了高压HBTs在高速SiGe BiCMOS技术中的集成。BVCEO范围从2v到5v的hbt具有全植入集电极，完全兼容230 ghz fT BiCMOS技术，仅使用一个额外的掩模就可以制造出来。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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High-Voltage HBTs Compatible with High-Speed SiGe BiCMOS Technology

This paper describes the integration of high-voltage HBTs in a high-speed SiGe BiCMOS technology. HBTs with BVCEO from 2 V to 5 V featuring an all-implanted collector and fully compatible with a 230-GHz fT BiCMOS technology have been fabricated using only one additional mask.

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2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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