{"title":"基于大型MOS电容器的可靠性预测","authors":"E. Domangue, R. Rivera, Clark G. Shepard","doi":"10.1109/IRPS.1984.362033","DOIUrl":null,"url":null,"abstract":"Large MOS capacitors were used in a study of the dielectric breakdown mechanism to establish the relationship among the results of various test methods. Reliance on models was avoided through the use of a test vehicle which duplicated the structures of a 64K dynamic memory device. A method is proposed to predict device reliability using process monitors at the time of wafer manufacture.","PeriodicalId":326004,"journal":{"name":"22nd International Reliability Physics Symposium","volume":"259 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1984-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":"{\"title\":\"Reliability Prediction using Large MOS Capacitors\",\"authors\":\"E. Domangue, R. Rivera, Clark G. Shepard\",\"doi\":\"10.1109/IRPS.1984.362033\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Large MOS capacitors were used in a study of the dielectric breakdown mechanism to establish the relationship among the results of various test methods. Reliance on models was avoided through the use of a test vehicle which duplicated the structures of a 64K dynamic memory device. A method is proposed to predict device reliability using process monitors at the time of wafer manufacture.\",\"PeriodicalId\":326004,\"journal\":{\"name\":\"22nd International Reliability Physics Symposium\",\"volume\":\"259 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1984-04-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"7\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"22nd International Reliability Physics Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IRPS.1984.362033\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"22nd International Reliability Physics Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IRPS.1984.362033","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Large MOS capacitors were used in a study of the dielectric breakdown mechanism to establish the relationship among the results of various test methods. Reliance on models was avoided through the use of a test vehicle which duplicated the structures of a 64K dynamic memory device. A method is proposed to predict device reliability using process monitors at the time of wafer manufacture.
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