Y. Yamauchi, K. Nagata, T. Makimura, O. Nakajima, H. Ito, T. Ishibashi
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10 Gb/s monolithic optical modulator driver with high output voltage of 5 V using InGaP/GaAs HBTs
We have developed a high-output-voltage monolithically integrated driver circuit for an external optical modulator using InGaP/GaAs HBTs with a collector breakdown voltage, BVceo, of 14 V. The driver circuit consists of an input buffer stage, two differential gain stages, an emitter-follower prefinal stage, and a final differential stage. The circuit operates stably with output signal voltage of 5.5 V at up to 12 Gb/s with a single-phase ECL-level input signal. Error-free operation is confirmed from the NRZ 2/sup 23/-1 PN pattern obtained at 10 Gb/s.
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