溶胶-凝胶法制备掺镁In2O3薄膜晶体管

2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Pub Date : 2018-07-01 DOI:10.23919/AM-FPD.2018.8437415

Taegyun Kim, Bongho Jang, Sojeong Lee, Won-Yong Lee, Jaewon Jang

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引用次数: 1

摘要

我们已经证明，镁掺杂效应导致氧化铟具有高负阈值电压，接近零偏置，在增强模式下工作，迁移率下降最小。在0.2wt%时，MIO薄膜的迁移率为11.96 cm2/Vs-s，阈值电压为-4 V，从- 18 V位移。

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Sol-gel processed Mg-doped In2O3 thin-film transistors

We have shown that the magnesium doping effect causes indium oxide with a high negative threshold voltage, close to zero bias, to operate in the enhancement mode, with minimal mobility degradation. At 0.2wt%, the MIO film had a mobility of 11.96 cm2/Vs-s and a threshold voltage of-4 V, having shifted from −18 V.

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2018 25th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)

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