A novel high purity, highly efficient, broadband MMIC frequency multiplier implemented in metamorphic HEMT technology

A new principle of a high efficiency active frequency multiplier is presented. High efficiency is achieved by operating the transistor in deep Class C by using a source RC-bias-network, forcing the conduction angle to be substantially less than 180deg. The principle can also be extended to balanced frequency multipliers for higher rejection of the fundamental frequency. The 'proof of concept' is demonstrated in a practical MMIC design. This design achieves, to our knowledge, the highest reported efficiency for a balanced frequency doubler, with high bandwidth