H. Forstner, A. Dehé, B. Eisener, K. Ettinger, U. Gerlach, A. Jentzsch, W. Klein, C. Lehrer
{"title":"用于802.11a, b和g WLAN应用的SiGe:C技术超低噪声放大器","authors":"H. Forstner, A. Dehé, B. Eisener, K. Ettinger, U. Gerlach, A. Jentzsch, W. Klein, C. Lehrer","doi":"10.1109/EMICC.2006.282767","DOIUrl":null,"url":null,"abstract":"A dual band low noise and low cost wireless LAN amplifier has been fully integrated in a commercial SiGe:C bipolar technology using a highly doped silicon substrate. Outstanding low noise figures of 0.9dB at 2.4GHz and 1.45dB at 6GHz have been measured. Current consumption is 11mA in the low band and 17 mA in the high band, out off a voltage supply of 3.2V, and stabilized by a bandgap voltage reference. Low band gain is 13.5dB with an IP-1dB of -7dBm and IIP3 of +4dBm. High band gain is 20dB with an IP-1dB of -9dBm and IIP3 of +3dBm","PeriodicalId":269652,"journal":{"name":"2006 European Microwave Integrated Circuits Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2006-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Ultra Low Noise Amplifier in SiGe:C Technology for 802.11a, b and g WLAN Applications\",\"authors\":\"H. Forstner, A. Dehé, B. Eisener, K. Ettinger, U. Gerlach, A. Jentzsch, W. Klein, C. Lehrer\",\"doi\":\"10.1109/EMICC.2006.282767\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A dual band low noise and low cost wireless LAN amplifier has been fully integrated in a commercial SiGe:C bipolar technology using a highly doped silicon substrate. Outstanding low noise figures of 0.9dB at 2.4GHz and 1.45dB at 6GHz have been measured. Current consumption is 11mA in the low band and 17 mA in the high band, out off a voltage supply of 3.2V, and stabilized by a bandgap voltage reference. Low band gain is 13.5dB with an IP-1dB of -7dBm and IIP3 of +4dBm. High band gain is 20dB with an IP-1dB of -9dBm and IIP3 of +3dBm\",\"PeriodicalId\":269652,\"journal\":{\"name\":\"2006 European Microwave Integrated Circuits Conference\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2006-09-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2006 European Microwave Integrated Circuits Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/EMICC.2006.282767\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2006 European Microwave Integrated Circuits Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMICC.2006.282767","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Ultra Low Noise Amplifier in SiGe:C Technology for 802.11a, b and g WLAN Applications
A dual band low noise and low cost wireless LAN amplifier has been fully integrated in a commercial SiGe:C bipolar technology using a highly doped silicon substrate. Outstanding low noise figures of 0.9dB at 2.4GHz and 1.45dB at 6GHz have been measured. Current consumption is 11mA in the low band and 17 mA in the high band, out off a voltage supply of 3.2V, and stabilized by a bandgap voltage reference. Low band gain is 13.5dB with an IP-1dB of -7dBm and IIP3 of +4dBm. High band gain is 20dB with an IP-1dB of -9dBm and IIP3 of +3dBm
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