J. Knobloch, S. Glunz, D. Biro, W. Warta, E. Schaffer, W. Wettling
{"title":"太阳能电池的效率在21%以上,由Czochralski生长的硅加工而成","authors":"J. Knobloch, S. Glunz, D. Biro, W. Warta, E. Schaffer, W. Wettling","doi":"10.1109/PVSC.1996.564029","DOIUrl":null,"url":null,"abstract":"Czochralski-Si (Cz-Si) of several manufacturers and with resistivities ranging from 1 to 13 /spl Omega/cm were processed into solar cells with efficiencies higher than 20% (AM1.5) using the LBSF/PERL processing sequence. The highest efficiency was 21.7%. The investigation of high efficiency Cz-Si solar cells was augmented by computer simulation and a study of the carrier lifetime before and after processing. A small degradation of solar cell performance in the lower resistivity material is discussed. Furthermore, a much simpler processing sequence is presented revealing efficiencies well above 19% on Cz-silicon and 21% on float zone-silicon.","PeriodicalId":410394,"journal":{"name":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-05-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"64","resultStr":"{\"title\":\"Solar cells with efficiencies above 21% processed from Czochralski grown silicon\",\"authors\":\"J. Knobloch, S. Glunz, D. Biro, W. Warta, E. Schaffer, W. Wettling\",\"doi\":\"10.1109/PVSC.1996.564029\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Czochralski-Si (Cz-Si) of several manufacturers and with resistivities ranging from 1 to 13 /spl Omega/cm were processed into solar cells with efficiencies higher than 20% (AM1.5) using the LBSF/PERL processing sequence. The highest efficiency was 21.7%. The investigation of high efficiency Cz-Si solar cells was augmented by computer simulation and a study of the carrier lifetime before and after processing. A small degradation of solar cell performance in the lower resistivity material is discussed. Furthermore, a much simpler processing sequence is presented revealing efficiencies well above 19% on Cz-silicon and 21% on float zone-silicon.\",\"PeriodicalId\":410394,\"journal\":{\"name\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-05-13\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"64\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/PVSC.1996.564029\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twenty Fifth IEEE Photovoltaic Specialists Conference - 1996","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1996.564029","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Solar cells with efficiencies above 21% processed from Czochralski grown silicon
Czochralski-Si (Cz-Si) of several manufacturers and with resistivities ranging from 1 to 13 /spl Omega/cm were processed into solar cells with efficiencies higher than 20% (AM1.5) using the LBSF/PERL processing sequence. The highest efficiency was 21.7%. The investigation of high efficiency Cz-Si solar cells was augmented by computer simulation and a study of the carrier lifetime before and after processing. A small degradation of solar cell performance in the lower resistivity material is discussed. Furthermore, a much simpler processing sequence is presented revealing efficiencies well above 19% on Cz-silicon and 21% on float zone-silicon.