E. Marigó, J. Munoz-Gamarra, J. Giner, J.L. Lopez, F. Torres, A. Uranga, N. Barniol, J. Verd
{"title":"11MHz CMOS-MEMS谐振器的线性运算","authors":"E. Marigó, J. Munoz-Gamarra, J. Giner, J.L. Lopez, F. Torres, A. Uranga, N. Barniol, J. Verd","doi":"10.1109/FREQ.2010.5556351","DOIUrl":null,"url":null,"abstract":"In this work, the characterization of the first lateral in-plane flexural mode DETF (Double Ended Tuning Fork) MEMS resonator integrated monolithically in a CMOS 0.35µm technology is done. This characterization is done with the same resonator stand-alone and with an integrated CMOS amplifier to obtain the handling dynamic range of the applied voltage (dc bias and ac signal) for a linear behavior of the resonator.","PeriodicalId":344989,"journal":{"name":"2010 IEEE International Frequency Control Symposium","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Linear operation of a 11MHz CMOS-MEMS resonator\",\"authors\":\"E. Marigó, J. Munoz-Gamarra, J. Giner, J.L. Lopez, F. Torres, A. Uranga, N. Barniol, J. Verd\",\"doi\":\"10.1109/FREQ.2010.5556351\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, the characterization of the first lateral in-plane flexural mode DETF (Double Ended Tuning Fork) MEMS resonator integrated monolithically in a CMOS 0.35µm technology is done. This characterization is done with the same resonator stand-alone and with an integrated CMOS amplifier to obtain the handling dynamic range of the applied voltage (dc bias and ac signal) for a linear behavior of the resonator.\",\"PeriodicalId\":344989,\"journal\":{\"name\":\"2010 IEEE International Frequency Control Symposium\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Frequency Control Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/FREQ.2010.5556351\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Frequency Control Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/FREQ.2010.5556351","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this work, the characterization of the first lateral in-plane flexural mode DETF (Double Ended Tuning Fork) MEMS resonator integrated monolithically in a CMOS 0.35µm technology is done. This characterization is done with the same resonator stand-alone and with an integrated CMOS amplifier to obtain the handling dynamic range of the applied voltage (dc bias and ac signal) for a linear behavior of the resonator.