带畸变可控偏置电路的SiGe HBT功率放大器及其在802.11g无线局域网中的应用

2006 Asia-Pacific Microwave Conference Pub Date : 2006-12-01 DOI:10.1109/APMC.2006.4429393

T. Oka, M. Hirata, Y. Ishimaru, H. Kawamura, K. Sakuno

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引用次数: 1

摘要

本文介绍了一种具有畸变可控偏置电路的SiGe HBT功率放大器。偏置电路中使用的mosfet使我们能够通过调节栅极电压来控制功率放大器的失真。使用该技术制作的用于802.11lg无线局域网的功率放大器MMIC具有出色的线性度和效率:在EVM为3%的情况下，在2.45 GHz的54 Mbps 64-QAM OFDM信号下实现了18.3 dBm的线性输出功率和16%的功率附加效率。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SiGe HBT power amplifier with distortion-controllable bias circuit and its application to 802.11g wireless LANs

This paper describes a SiGe HBT power amplifier with distortion-controllable bias circuits. MOSFETs employed in the bias circuits enable us to control the distortion of power amplifiers by adjusting the gate voltages. The power amplifier MMIC for 802.11lg wireless LANs fabricated using the technique exhibited excellent linearity and efficiency: a linear output power of 18.3 dBm and a power-added efficiency of 16% were achieved at an EVM of 3%, measured with 54 Mbps 64-QAM OFDM signals at 2.45 GHz.

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2006 Asia-Pacific Microwave Conference

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