用器件矩阵法设计静态电流模拟器

D. Bharti, Abhijit R. Asati
{"title":"用器件矩阵法设计静态电流模拟器","authors":"D. Bharti, Abhijit R. Asati","doi":"10.1109/ISED.2012.38","DOIUrl":null,"url":null,"abstract":"I-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user. This device matrix undergoes many different operations, and various mathematical computations are performed, using which I-V characteristic is plotted. This approach gives a novel idea of basic device level tool development. The students and device level engineers can find this work useful which offers them an interactive and instant way to draw I-V characteristics of the device. The algorithm implementation is modular and matrix based, which is done using MATLAB®.","PeriodicalId":276803,"journal":{"name":"2012 International Symposium on Electronic System Design (ISED)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Design of a Static Current Simulator Using Device Matrix Approach\",\"authors\":\"D. Bharti, Abhijit R. Asati\",\"doi\":\"10.1109/ISED.2012.38\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"I-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user. This device matrix undergoes many different operations, and various mathematical computations are performed, using which I-V characteristic is plotted. This approach gives a novel idea of basic device level tool development. The students and device level engineers can find this work useful which offers them an interactive and instant way to draw I-V characteristics of the device. The algorithm implementation is modular and matrix based, which is done using MATLAB®.\",\"PeriodicalId\":276803,\"journal\":{\"name\":\"2012 International Symposium on Electronic System Design (ISED)\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2012-12-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2012 International Symposium on Electronic System Design (ISED)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISED.2012.38\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Symposium on Electronic System Design (ISED)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISED.2012.38","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

I-V特性是器件模拟器产生的重要结果之一。在本文中,提出了一种新的基于交互矩阵的算法,以二维或三维方式绘制器件结构,并绘制用户指定掺杂和偏置条件下器件的I-V特性。算法根据用户提出的设备描述,生成设备的二维或三维矩阵。该器件矩阵经历了许多不同的运算,并进行了各种数学计算,利用这些计算绘制了I-V特性。这种方法为基本设备级工具开发提供了一种新的思路。学生和设备级工程师可以发现这项工作很有用,它为他们提供了一种交互式和即时的方式来绘制设备的I-V特性。算法的实现是模块化的,基于矩阵,使用MATLAB®完成。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Design of a Static Current Simulator Using Device Matrix Approach
I-V characteristic is one of the important results produced by a device simulator. In this article, a novel and interactive matrix based algorithm is presented to draw the device structure in 2-D or 3-D style and to plot the I-V characteristic of the device for user specified doping and biasing conditions. Algorithm creates 2-D or 3-D matrix of the device from device description mentioned by the user. This device matrix undergoes many different operations, and various mathematical computations are performed, using which I-V characteristic is plotted. This approach gives a novel idea of basic device level tool development. The students and device level engineers can find this work useful which offers them an interactive and instant way to draw I-V characteristics of the device. The algorithm implementation is modular and matrix based, which is done using MATLAB®.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Multi-objective Low-Power CDFG Scheduling Using Fine-Grained DVS Architecture in Distributed Framework Improvement in Target Detectability Using Spread Spectrum Radar in Dispersive Channel Condition Systolic Variable Length Architecture for Discrete Fourier Transform in Long Term Evolution High Speed Generic Network Interface for Network on Chip Using Ping Pong Buffers Synthesis of Toffoli Networks: Status and Challenges
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1