800 nm激光二极管用AlGaAs波导中无al量子阱结构的研究

Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society Pub Date : 1996-11-18 DOI:10.1109/LEOS.1996.565114

G. Erber, F. Bugge, J. Sebastian, K. Vogel, H. Wenzel, M. Weyers

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引用次数: 1

摘要

研究了在有源区使用应变GaAsP-和非应变ingaasp - sqw发射800 nm高功率激光二极管。对于1000 /spl μ m长的激光二极管，实现了非常小的远场角23/spl°/和1.1 W/A的高效率。一根1厘米长、有功面积37.5%的棒显示出60瓦的cw输出功率。

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A study of structures with Al-free QWs in AlGaAs waveguides for laser diodes emitting at 800 nm

High power laser diodes emitting at 800 nm using strained GaAsP- and unstrained InGaAsP-SQWs in the active region are investigated. A very small far field angle of 23/spl deg/ and a high efficiency of 1.1 W/A for 1000 /spl mu/m long laser diodes are achieved. A 1 cm bar with 37.5 % active area shows a CW-output power of 60 W.

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Conference Proceedings LEOS'96 9th Annual Meeting IEEE Lasers and Electro-Optics Society

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