Co-Design of a Ka-Band High-Gain Low-Noise Amplifier and Chip-on-Board Packaging

This paper presents a co-design of Ka-band high-gain low-noise amplifier (LNA) integrated circuit (IC) and chip-on-board packaging for the 5G applications. In this high-gain Ka-band LNA, a dual-LC tank matching technique is applied at the input to achieve wide-band simultaneous noise and power matching. This LNA IC is implemented in a 0.25 µm SiGe BiC-MOS technology, and it is packaged in a chip-on-board technique. Therefore, this IC is co-designed with bond-wires and passive structures on the printed circuit board. The measured results show that this LNA chip provides 28 dB peak gain at 32 GHz and larger than 20 dB power gain from 27 to 35 GHz. The in-band noise figure is between 3.1 and 4.1 dB. After packing, the packaged amplifier can deliver 19 dB power gain and 5.6 dB NF at 29 GHz.