{"title":"一种用于通信电路的高线性高效HBT","authors":"R.S. Brozovich, D. Helms, L.W. Yang, J. Komiak","doi":"10.1109/GAAS.1994.636986","DOIUrl":null,"url":null,"abstract":"A Martin Marietta Laboratory heterojunction bipolar transistor, which was fabricated using a base-emitter realigned process to reduce surface recombination, has been load pulled to demonstrate that it is simultaneously highly linear and efficient. Achieving a breakthrough in highly linear C-band communications power amplification, the HBT demonstrated a linearity of 30 dB C/I, typically required by communications systems, with 61% power added efficiency at 6 GHz. When tuned for maximum efficiency it achieved 72% P.A.E.","PeriodicalId":328819,"journal":{"name":"Proceedings of 1994 IEEE GaAs IC Symposium","volume":"74 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"A highly-linear highly efficient HBT for communications circuits\",\"authors\":\"R.S. Brozovich, D. Helms, L.W. Yang, J. Komiak\",\"doi\":\"10.1109/GAAS.1994.636986\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A Martin Marietta Laboratory heterojunction bipolar transistor, which was fabricated using a base-emitter realigned process to reduce surface recombination, has been load pulled to demonstrate that it is simultaneously highly linear and efficient. Achieving a breakthrough in highly linear C-band communications power amplification, the HBT demonstrated a linearity of 30 dB C/I, typically required by communications systems, with 61% power added efficiency at 6 GHz. When tuned for maximum efficiency it achieved 72% P.A.E.\",\"PeriodicalId\":328819,\"journal\":{\"name\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"volume\":\"74 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1994-10-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1994 IEEE GaAs IC Symposium\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/GAAS.1994.636986\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1994 IEEE GaAs IC Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1994.636986","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
摘要
Martin Marietta实验室的一种异质结双极晶体管，采用基极-发射极重新排列工艺来减少表面复合，已被负载拉出，以证明它同时具有高度线性和高效率。在高线性C波段通信功率放大方面取得了突破，HBT展示了30 dB C/I的线性度，这是通信系统通常需要的，在6 GHz时功率增加效率为61%。当调整到最高效率时，它达到了72%的P.A.E.
A highly-linear highly efficient HBT for communications circuits
A Martin Marietta Laboratory heterojunction bipolar transistor, which was fabricated using a base-emitter realigned process to reduce surface recombination, has been load pulled to demonstrate that it is simultaneously highly linear and efficient. Achieving a breakthrough in highly linear C-band communications power amplification, the HBT demonstrated a linearity of 30 dB C/I, typically required by communications systems, with 61% power added efficiency at 6 GHz. When tuned for maximum efficiency it achieved 72% P.A.E.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
