Hsin-Liang Liu, Z. Jhou, Shih-Teng Huang, Shu‐Wha Lin, Ke-Feng Lin, Chiu-Te Lee, Chih-Chong Wang
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A novel high-voltage LDMOS with shielding-contact structure for HCl SOA enhancement
This paper demonstrated a novel LDMOS with gate-connected shielding-contact structure, no extra mask or process is needed. TCAD simulation reveals lower electrical potential and impact ionization with the proposed structure. Ron-sp/BVD ratio reduction and significant HCl SOA improvement have been verified on real Silicon. Newly layout with Slot-Poly design has been investigated for better process control as well.
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