S. Nakagawa, E. Hall, G. Almuneau, J.K. Kim, H. Kroemer, L. Coldren
{"title":"1.55-/spl mu/m,在CW下在RT下运行的inp晶格匹配vcsel","authors":"S. Nakagawa, E. Hall, G. Almuneau, J.K. Kim, H. Kroemer, L. Coldren","doi":"10.1109/ISLC.2000.882332","DOIUrl":null,"url":null,"abstract":"We demonstrate the first room temperature, continuous-wave (CW) operation of a 1.55-/spl mu/m InGaAs vertical-cavity surface emitting laser (VCSEL) that is completely lattice-matched to InP and produced in one epitaxial growth. The structure employed intracavity contacts with an air-gap aperture. The threshold current and threshold current density were 6.2mA and 1.97kA/cm/sup 2/, respectively, at 200 C with a 20-/spl mu/m-diameter current aperture.","PeriodicalId":322366,"journal":{"name":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","volume":"56 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"1.55-/spl mu/m, InP-lattice-matched VCSELs operating at RT under CW\",\"authors\":\"S. Nakagawa, E. Hall, G. Almuneau, J.K. Kim, H. Kroemer, L. Coldren\",\"doi\":\"10.1109/ISLC.2000.882332\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We demonstrate the first room temperature, continuous-wave (CW) operation of a 1.55-/spl mu/m InGaAs vertical-cavity surface emitting laser (VCSEL) that is completely lattice-matched to InP and produced in one epitaxial growth. The structure employed intracavity contacts with an air-gap aperture. The threshold current and threshold current density were 6.2mA and 1.97kA/cm/sup 2/, respectively, at 200 C with a 20-/spl mu/m-diameter current aperture.\",\"PeriodicalId\":322366,\"journal\":{\"name\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"volume\":\"56 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISLC.2000.882332\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 2000 IEEE 17th International Semiconductor Laser Conference. (Cat. No.00CH37092)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.2000.882332","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
1.55-/spl mu/m, InP-lattice-matched VCSELs operating at RT under CW
We demonstrate the first room temperature, continuous-wave (CW) operation of a 1.55-/spl mu/m InGaAs vertical-cavity surface emitting laser (VCSEL) that is completely lattice-matched to InP and produced in one epitaxial growth. The structure employed intracavity contacts with an air-gap aperture. The threshold current and threshold current density were 6.2mA and 1.97kA/cm/sup 2/, respectively, at 200 C with a 20-/spl mu/m-diameter current aperture.