{"title":"77 K和300 K下铜互连集肤效应的有限元分析","authors":"U. Ghoshal, L. Smith","doi":"10.1109/MWSYM.1988.22146","DOIUrl":null,"url":null,"abstract":"A methodology is presented for calculating normal skin effect in complex geometries using the finite-element method. The results are used to analyze the performance of copper interconnects at 77 K and 300 K for both digital and microwave applications. The analysis includes attenuation per unit length, phase velocity and characteristic impedance as a function of frequency from DC to 10 GHz. It was found that for digital signal propagation, skin effects are important for predicting rise-time degradation for rise-time less than 1.2 times the flight delay, while for larger rise-times, the DC resistance corresponding to the cross-section of the signal line is adequate for explaining the lossy characteristics.<<ETX>>","PeriodicalId":339513,"journal":{"name":"1988., IEEE MTT-S International Microwave Symposium Digest","volume":"329 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1988-05-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"13","resultStr":"{\"title\":\"Finite element analysis of skin effect in copper interconnects at 77 K and 300 K\",\"authors\":\"U. Ghoshal, L. Smith\",\"doi\":\"10.1109/MWSYM.1988.22146\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A methodology is presented for calculating normal skin effect in complex geometries using the finite-element method. The results are used to analyze the performance of copper interconnects at 77 K and 300 K for both digital and microwave applications. The analysis includes attenuation per unit length, phase velocity and characteristic impedance as a function of frequency from DC to 10 GHz. It was found that for digital signal propagation, skin effects are important for predicting rise-time degradation for rise-time less than 1.2 times the flight delay, while for larger rise-times, the DC resistance corresponding to the cross-section of the signal line is adequate for explaining the lossy characteristics.<<ETX>>\",\"PeriodicalId\":339513,\"journal\":{\"name\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"volume\":\"329 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1988-05-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"13\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1988., IEEE MTT-S International Microwave Symposium Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MWSYM.1988.22146\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1988., IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1988.22146","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Finite element analysis of skin effect in copper interconnects at 77 K and 300 K
A methodology is presented for calculating normal skin effect in complex geometries using the finite-element method. The results are used to analyze the performance of copper interconnects at 77 K and 300 K for both digital and microwave applications. The analysis includes attenuation per unit length, phase velocity and characteristic impedance as a function of frequency from DC to 10 GHz. It was found that for digital signal propagation, skin effects are important for predicting rise-time degradation for rise-time less than 1.2 times the flight delay, while for larger rise-times, the DC resistance corresponding to the cross-section of the signal line is adequate for explaining the lossy characteristics.<>