LSI光刻:现状与未来趋势

S. Yoshida
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引用次数: 0

摘要

目前的光刻方法采用较短波长的光来获得更精细的分辨能力,例如现在正在发生的从g线到i线步进器的快速转变。相移或部分照明方法等新技术的应用将进一步推动这一趋势。然后是使用准分子激光作为光源的深紫外光刻,它似乎可以达到0.2 5µm的分辨率,用于生产lsi。
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LSI Lithography: Present Status and Future Trends
The current photolithographic methods employ shorter wavelength light for finer resolving power as exemplified in the rapid transition from g-line to i-line steppers now taking place. The application of new technological attempts like phase-shift or partial illumination methods will further pursuit this trend. Then comes the deep-UV lithography with Eximer laser used as the light source, with which it seems possible to attain 0.2 5µm resolution for production LSIs.
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