静态RAMs单事件扰动敏感性的飞行和地面测试

RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294) Pub Date : 1997-09-15 DOI:10.1109/RADECS.1997.699010

K. Johansson, P. Dyreklev, B. Granbom, M. Calvet, S. Fourtine, O. Feuillatre

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引用次数: 58

摘要

本文介绍了由飞机高度大气辐射环境引起的静态随机存储器(SRAM)单事件扰动(SEU)的飞行测量结果。这些存储设备是由商业航空公司在高海拔地区携带的，主要是高纬度地区。seu由专门为该实验设计的部件变形测试设备(CUTE)进行监测。在飞行中的结果与地面上用三个不同来源的中子进行的测试进行了比较。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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In-flight and ground testing of single event upset sensitivity in static RAMs

This paper presents the results from in-flight measurements of single event upsets (SEU) in static random access memories (SRAM) caused by the atmospheric radiation environment at aircraft altitudes. The memory devices were carried on commercial airlines at high altitude and mainly high latitudes. The SEUs were monitored by a Component Upset Test Equipment (CUTE), designed for this experiment. The in flight results are compared to ground based testing with neutrons from three different sources.

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RADECS 97. Fourth European Conference on Radiation and its Effects on Components and Systems (Cat. No.97TH8294)

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