{"title":"增强型光可调谐激励电容器(EOTEC),响应速度更快","authors":"Harel Brestel, Z. Zalevsky, A. Karsenty","doi":"10.1109/ICSEE.2018.8646169","DOIUrl":null,"url":null,"abstract":"The expected performances of an Enhanced Optical Tunable Excited Capacitor (EOTEC) have been studied, as part of a large effort to develop optoelectronic high-speed devices for optical communication. The influence of nano/micro-crystal dots, embedded in a thick SiO2 film grown on a silicon substrate, has been studied as a function of several parameters such as the sweep rate, the penetration depth, the dots size and the various materials properties of several elements. We numerically demonstrate capabilities of future faster optoelectronic responsivity. The obtained series of C-V curves enable a good forecast of the possible usage and applications, such as MOSFET, tunable capacitor, memory unit, and Boolean logic element.","PeriodicalId":254455,"journal":{"name":"2018 IEEE International Conference on the Science of Electrical Engineering in Israel (ICSEE)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Enhanced Optical Tunable Excited Capacitor (EOTEC) for Faster Responsivity\",\"authors\":\"Harel Brestel, Z. Zalevsky, A. Karsenty\",\"doi\":\"10.1109/ICSEE.2018.8646169\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The expected performances of an Enhanced Optical Tunable Excited Capacitor (EOTEC) have been studied, as part of a large effort to develop optoelectronic high-speed devices for optical communication. The influence of nano/micro-crystal dots, embedded in a thick SiO2 film grown on a silicon substrate, has been studied as a function of several parameters such as the sweep rate, the penetration depth, the dots size and the various materials properties of several elements. We numerically demonstrate capabilities of future faster optoelectronic responsivity. The obtained series of C-V curves enable a good forecast of the possible usage and applications, such as MOSFET, tunable capacitor, memory unit, and Boolean logic element.\",\"PeriodicalId\":254455,\"journal\":{\"name\":\"2018 IEEE International Conference on the Science of Electrical Engineering in Israel (ICSEE)\",\"volume\":\"49 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Conference on the Science of Electrical Engineering in Israel (ICSEE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICSEE.2018.8646169\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on the Science of Electrical Engineering in Israel (ICSEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSEE.2018.8646169","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Enhanced Optical Tunable Excited Capacitor (EOTEC) for Faster Responsivity
The expected performances of an Enhanced Optical Tunable Excited Capacitor (EOTEC) have been studied, as part of a large effort to develop optoelectronic high-speed devices for optical communication. The influence of nano/micro-crystal dots, embedded in a thick SiO2 film grown on a silicon substrate, has been studied as a function of several parameters such as the sweep rate, the penetration depth, the dots size and the various materials properties of several elements. We numerically demonstrate capabilities of future faster optoelectronic responsivity. The obtained series of C-V curves enable a good forecast of the possible usage and applications, such as MOSFET, tunable capacitor, memory unit, and Boolean logic element.