W、Mo和Re真空镀层场电子发射稳定性随衬底温度的变化

N. Chubun, O. L. Golubev, B. Djubua, V. N. Shrednik
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引用次数: 0

摘要

研究了Mo对Mo、W对W和Re对Re真空镀层的场电子发射特性。在同一材料的尖端上沉积了许多Mo、W和Re的单原子层。衬底温度的使用范围很广:Mo、W和Re分别从室温到660、800和660 K。在这些温度范围内,得到了三种矿床的表面形态:(1)低温无序凝析;(二)所谓复制;(3)有序的晶体生长(所谓的“项圈”)。然后考察了场电流的稳定性。结果表明,复制阶段的特征是最稳定的形式。最不稳定的情况是典型的低温无序冷凝水。
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Stability of field electron emission of W, Mo and Re vacuum deposits depending on substrate temperature
Field electron emission of Mo on Mo, W on W and Re on Re vacuum deposits has been investigated. Many monatomic layers of Mo, W and Re have been deposited on the tip of the same material. A wide range of substrate temperature has been used: from room temperature to 660, 800 and 660 K for Mo, W and Re respectively. Three surface forms of deposit have been obtained in these temperature ranges: (1) low-temperature disordered condensate; (2) so called replication; and (3) ordered crystal outgrowths (so called "collars"). Then the stability of field electron current was examined. As a result it was shown that the stage of replication was characterised as the most stable form. The most unstable situation was typical for the low-temperature disordered condensate.
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