用片上波形监测器进行带隙电压参考噪声分析

Akitaka Murata, Shuji Agatsuma, D. Ikoma, K. Ichikawa, T. Tsuda, M. Nagata, K. Yoshikawa, Y. Araga, Yuji Harada
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引用次数: 4

摘要

本文采用片上波形监测电路,结合电路仿真,研究了CMOS带隙基准电压(BGR)对外部噪声的敏感性。采用直接射频功率注入法对BGR进行抗扰度测试。此外,我们还评估了片上波形监测器的性能,并使用片上监测器分析了BGR抗扰度。研究结果明确了BGR故障的机理。BGR的输出电压降是由运放的偏置引起的。
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Noise analysis using on-chip waveform monitor in bandgap voltage references
In this paper, the susceptibility of a CMOS bandgap voltage reference (BGR) to external noise was investigated using an on-chip waveform monitor circuit in conjunction with circuit simulations. A Direct RF Power Injection method was employed for the immunity test of the BGR. Also, we evaluated the performance of the on-chip waveform monitor and analyze the BGR immunity using the on-chip monitor. As the results, we have clarified the mechanism of the BGR malfunction. The output voltage drop of the BGR was caused by the offset of operational amplifier in BGR.
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