{"title":"基于sem的原位延迟先进10nm技术节点IC纳米探测","authors":"Marek Sikul, K. Novotný, M. Kemmler, A. Rummel","doi":"10.1109/IPFA.2018.8452498","DOIUrl":null,"url":null,"abstract":"Following the trend of continuous structure downsizing, it is becoming increasingly challenging to perform standard failure analyses. For instance, nanoprobing on sub-14 nm technology nodes requires well-prepared samples, ultra-sharp tips and especially thermal and mechanical stability. Moreover, standard mechanical polishing starts to fail on lower metal layers due to their very small thickness. In this paper we propose a method of site-specific gas-assisted homogeneous delayering followed by in-situ nanoprobing measurement in a single FIB/SEM system.","PeriodicalId":382811,"journal":{"name":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"47 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"SEM-Based Nanoprobing on In-Situ Delayered Advanced 10 nm Technology Node IC\",\"authors\":\"Marek Sikul, K. Novotný, M. Kemmler, A. Rummel\",\"doi\":\"10.1109/IPFA.2018.8452498\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Following the trend of continuous structure downsizing, it is becoming increasingly challenging to perform standard failure analyses. For instance, nanoprobing on sub-14 nm technology nodes requires well-prepared samples, ultra-sharp tips and especially thermal and mechanical stability. Moreover, standard mechanical polishing starts to fail on lower metal layers due to their very small thickness. In this paper we propose a method of site-specific gas-assisted homogeneous delayering followed by in-situ nanoprobing measurement in a single FIB/SEM system.\",\"PeriodicalId\":382811,\"journal\":{\"name\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"47 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-07-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2018.8452498\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2018.8452498","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
SEM-Based Nanoprobing on In-Situ Delayered Advanced 10 nm Technology Node IC
Following the trend of continuous structure downsizing, it is becoming increasingly challenging to perform standard failure analyses. For instance, nanoprobing on sub-14 nm technology nodes requires well-prepared samples, ultra-sharp tips and especially thermal and mechanical stability. Moreover, standard mechanical polishing starts to fail on lower metal layers due to their very small thickness. In this paper we propose a method of site-specific gas-assisted homogeneous delayering followed by in-situ nanoprobing measurement in a single FIB/SEM system.