高功能和可靠的8Mb STT-MRAM嵌入在28nm逻辑

2016 IEEE International Electron Devices Meeting (IEDM) Pub Date : 2016-12-01 DOI:10.1109/IEDM.2016.7838491

Y. Song, J. Lee, H. Shin, K. H. Lee, K. Suh, J. R. Kang, S. Pyo, H. Jung, S. Hwang, G. Koh, Sechung Oh, Soojeoung Park, Jinhak Kim, Jae-Kyun Park, Ju-Sik Kim, K. Hwang, G. Jeong, K. Lee, E. Jung

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引用次数: 84

摘要

我们通过开发新的集成/堆栈/图像化技术，在28nm CMOS逻辑平台上制造了8Mb 1T-1MTJ STT-MRAM宏。MTJ存储单元阵列成功嵌入Cu后端，没有出现开放性失效和严重的磁性退化。开发了采用MgO/CoFeB的先进垂直MTJ堆栈，完全集成后TMR值高达180%。此外，对离子束蚀刻(IBE)工艺进行了功率、角度和压力等方面的优化，使短失效率降低到1ppm以下。通过这些新技术，我们展示了高功能和可靠的8Mb eMRAM宏，具有宽传感裕度和85℃和10年的强保留性能。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Highly functional and reliable 8Mb STT-MRAM embedded in 28nm logic

We fabricated 8Mb 1T-1MTJ STT-MRAM macro embedded in 28nm CMOS logic platform by developing novel integration/stack/patterning technologies. MTJ memory cell array was successfully embedded into Cu backend without open fail and severe degradation of magnetic property. Advanced perpendicular MTJ stack using MgO/CoFeB was developed to show high TMR value of 180% after full integration. In addition, ion beam etching (IBE) process was optimized with power, angle, and pressure to reduce a short fail below 1 ppm. Through these novel technologies, we demonstrated highly functional and reliable 8Mb eMRAM macro having a wide sensing margin and strong retention property of 85 0C and 10yrs.

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2016 IEEE International Electron Devices Meeting (IEDM)

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