{"title":"用多孔硅作为冷阴极场发射极的阴极发光器件的制造和表征","authors":"D. Elqaq, M. Hasan","doi":"10.1109/IEDM.2000.904398","DOIUrl":null,"url":null,"abstract":"A cost efficient, easy to fabricate cathodoluminescent (CL) device that utilizes porous silicon (Si) as a high-density field emitter in a vacuumless layered structure, was fabricated and tested. The structure consists of a porous Si substrate capped with three layers: an active phosphor layer, an insulating layer and a transparent indium-tin-oxide electrode. Electrons emitted from protrusions in porous Si are accelerated toward the phosphor layer where light is generated both upon impact ionization of activator atoms and due to further ballistic acceleration of electrons within the phosphor layer.","PeriodicalId":276800,"journal":{"name":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","volume":"83 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Fabrication and characterization of cathodoluminescent devices made using porous silicon as a cold-cathode field emitter\",\"authors\":\"D. Elqaq, M. Hasan\",\"doi\":\"10.1109/IEDM.2000.904398\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A cost efficient, easy to fabricate cathodoluminescent (CL) device that utilizes porous silicon (Si) as a high-density field emitter in a vacuumless layered structure, was fabricated and tested. The structure consists of a porous Si substrate capped with three layers: an active phosphor layer, an insulating layer and a transparent indium-tin-oxide electrode. Electrons emitted from protrusions in porous Si are accelerated toward the phosphor layer where light is generated both upon impact ionization of activator atoms and due to further ballistic acceleration of electrons within the phosphor layer.\",\"PeriodicalId\":276800,\"journal\":{\"name\":\"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)\",\"volume\":\"83 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IEDM.2000.904398\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2000.904398","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Fabrication and characterization of cathodoluminescent devices made using porous silicon as a cold-cathode field emitter
A cost efficient, easy to fabricate cathodoluminescent (CL) device that utilizes porous silicon (Si) as a high-density field emitter in a vacuumless layered structure, was fabricated and tested. The structure consists of a porous Si substrate capped with three layers: an active phosphor layer, an insulating layer and a transparent indium-tin-oxide electrode. Electrons emitted from protrusions in porous Si are accelerated toward the phosphor layer where light is generated both upon impact ionization of activator atoms and due to further ballistic acceleration of electrons within the phosphor layer.