部分耗尽SOI MOSFET零温度系数的体偏置控制

2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems Pub Date : 2008-02-01 DOI:10.1109/SMIC.2008.35

M. El Kaamouchi, G. Dambrine, M. Si Moussa, M. Emam, D. Vanhoenacker-Janvier, J. Raskin

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引用次数: 8

摘要

本研究探讨了通过控制体源正向偏置(VBS)来调整部分耗尽(PD) SOI nMOSFET技术中零温度系数(ZTC)点的可能性。在温度介于25℃至200℃之间的饱和区测量了不同体源正向偏置条件下的跨导和漏极电流。发现阈值电压(VTH)随体偏置的变化对ZTC点有影响。测量结果显示，栅极电压的宽电压范围提供了跨导ZTC点(VGS,ZTC9m)或漏极电流ZTC点(VGS,ZTC1DS)，为夜间温度应用的射频电路设计开辟了重要的机会。

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Body-Biasing Control on Zero-Temperature-Coefficient in Partially Depleted SOI MOSFET

This work investigates the possibility to tune the zero-temperature-coefficient (ZTC) points in partially depleted (PD) SOI nMOSFET technology by controlling the body-source forward bias (VBS). Measured transconductance and drain current in the saturation region at temperatures between 25 and 200degC were observed for various body-source forward bias conditions. It is found that the variation of threshold voltage (VTH) with body bias has an influence on ZTC points. The measurement results show wide voltage-range of gate-voltage giving either the transconductance ZTC point (VGS,ZTC9m) or the drain-current ZTC point (VGS,ZTC1DS) opening important opportunities in RF circuits design for nigh temperature applications.

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2008 IEEE Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems

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