S. Amon, D. Vrtacnik, D. Rsnik, D. Križaj, U. Aljancic, M. Mozek
{"title":"基于sjfet的PTAT传感器","authors":"S. Amon, D. Vrtacnik, D. Rsnik, D. Križaj, U. Aljancic, M. Mozek","doi":"10.1109/MELCON.2000.880055","DOIUrl":null,"url":null,"abstract":"A new PTAT temperature sensor is studied. Sensor structure is based on the recently introduced SJFET approach, enabling device isolation/integration on the same chip and being compatible with micromachining. The approach is based on the well-established discrete silicon device bipolar technology. Test PTAT structures were designed, fabricated and characterized. Measurements on fabricated test PTAT structures revealed good sensitivity, stability and linearity of sensor response.","PeriodicalId":151424,"journal":{"name":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-05-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"PTAT sensors based on SJFETs\",\"authors\":\"S. Amon, D. Vrtacnik, D. Rsnik, D. Križaj, U. Aljancic, M. Mozek\",\"doi\":\"10.1109/MELCON.2000.880055\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"A new PTAT temperature sensor is studied. Sensor structure is based on the recently introduced SJFET approach, enabling device isolation/integration on the same chip and being compatible with micromachining. The approach is based on the well-established discrete silicon device bipolar technology. Test PTAT structures were designed, fabricated and characterized. Measurements on fabricated test PTAT structures revealed good sensitivity, stability and linearity of sensor response.\",\"PeriodicalId\":151424,\"journal\":{\"name\":\"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)\",\"volume\":\"48 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2000-05-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/MELCON.2000.880055\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2000 10th Mediterranean Electrotechnical Conference. Information Technology and Electrotechnology for the Mediterranean Countries. Proceedings. MeleCon 2000 (Cat. No.00CH37099)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MELCON.2000.880055","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new PTAT temperature sensor is studied. Sensor structure is based on the recently introduced SJFET approach, enabling device isolation/integration on the same chip and being compatible with micromachining. The approach is based on the well-established discrete silicon device bipolar technology. Test PTAT structures were designed, fabricated and characterized. Measurements on fabricated test PTAT structures revealed good sensitivity, stability and linearity of sensor response.
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