A. Labrujere, T. Klaassen, W. Wenckebach, C. Foxon
{"title":"gaas中si供体的远红外光导实验","authors":"A. Labrujere, T. Klaassen, W. Wenckebach, C. Foxon","doi":"10.1109/irmm.1987.9127018","DOIUrl":null,"url":null,"abstract":"The far infrared photoconductivity of Si doped GaAs has been studied using an optically pumped FIR laser working in the 10-150 cm range. At temperatures between H and 10 K in magnetic fields up to 12 T an almost complete set of transitions from the shallow (Si) donor groundstate to the excited hydrogenic levels (n = 2,3,4) is observed. The obtained field dependence of the energy levels is in good agreement with theoretical calculations.","PeriodicalId":399243,"journal":{"name":"1987 Twelth International Conference on Infrared and Millimeter Waves","volume":"322 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1987-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Far infrared photoconductivity experiments on the si donor in gaas\",\"authors\":\"A. Labrujere, T. Klaassen, W. Wenckebach, C. Foxon\",\"doi\":\"10.1109/irmm.1987.9127018\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The far infrared photoconductivity of Si doped GaAs has been studied using an optically pumped FIR laser working in the 10-150 cm range. At temperatures between H and 10 K in magnetic fields up to 12 T an almost complete set of transitions from the shallow (Si) donor groundstate to the excited hydrogenic levels (n = 2,3,4) is observed. The obtained field dependence of the energy levels is in good agreement with theoretical calculations.\",\"PeriodicalId\":399243,\"journal\":{\"name\":\"1987 Twelth International Conference on Infrared and Millimeter Waves\",\"volume\":\"322 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1987-12-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1987 Twelth International Conference on Infrared and Millimeter Waves\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/irmm.1987.9127018\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1987 Twelth International Conference on Infrared and Millimeter Waves","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/irmm.1987.9127018","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Far infrared photoconductivity experiments on the si donor in gaas
The far infrared photoconductivity of Si doped GaAs has been studied using an optically pumped FIR laser working in the 10-150 cm range. At temperatures between H and 10 K in magnetic fields up to 12 T an almost complete set of transitions from the shallow (Si) donor groundstate to the excited hydrogenic levels (n = 2,3,4) is observed. The obtained field dependence of the energy levels is in good agreement with theoretical calculations.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
