40 μm和20 μm微凸块厚度的TCB优化

C. Gerets, J. Derakhshandeh, P. Bex, M. Lofrano, V. Cherman, T. Cochet, K. Rebibis, G. Beyer, Andy Miller, E. Beyne
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引用次数: 2

摘要

本文研究了薄型、翘曲型和大型模具的D2W (Die to Wafer) TCB (Thermal Compression Bonding)叠层优化工艺。通过分析计算/模拟和原位变形测量技术对WLUF (Wafer Level Underfill)的TCB相关特性进行了详细的研究,并将研究结果用于降低TCB剖面所需的粘结力。进一步的优化包括增强界面温度均匀性,以及修改称为Thermode的顶部键合工具。这些优化的结果使薄型和翘曲型大模具在TCB过程中具有良好的压平性和均匀的压力分布。大型叠合模具有非常低的翘曲变形,tsv和20um节距微凸点之间的连接形成非常好,电导率接近100%。
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TCB optimization for stacking large thinned dies with 40 and 20 μm pitch microbumps
In this paper optimization process of D2W (Die to Wafer) TCB (Thermal Compression Bonding) stacking for thinned, warped and large dies are investigated. TCB related characteristics of WLUF (Wafer Level Underfill) is studied in detail by both analytical calculations/simulations and insitu deformation measurement techniques and then the results are used to lower the required bond force of TCB profile. Further optimizations include the enhancement of the interface temperature uniformity, and modification of the top bond tool called Thermode. These optimizations result in good flattening of the thin and warped large die, and uniform pressure distribution during the TCB process. The large stacked dies show very low warpage, very good joint formation between TSVs and 20um pitch microbumps and close to 100{\%} electrical yield.
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