高功率(> 1w)半导体激光器

R. Lang, R. Parke, D. Mehuys, S. O’Brien, J. Major, J. Osinski, G. Harnagel, F. Shum, D. Welch
{"title":"高功率(> 1w)半导体激光器","authors":"R. Lang, R. Parke, D. Mehuys, S. O’Brien, J. Major, J. Osinski, G. Harnagel, F. Shum, D. Welch","doi":"10.1364/slada.1995.tuc.1","DOIUrl":null,"url":null,"abstract":"Coherent semiconductor sources based on flared amplifiers — monolithic and discrete MOPAs and flared unstable resonators have demonstrated the highest cw diffraction-limited output powers from semiconductor sources at wavelengths from 630 nm to beyond 2 μm. This talk will describe continuing advances in flared amplifier devices, including visible output powers approaching 1 W cw diffraction limited, powers up to 10 W diffraction-limited from monolithic devices, high-speed modulation, and more.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"High Power (>1 W) Semiconductor Lasers\",\"authors\":\"R. Lang, R. Parke, D. Mehuys, S. O’Brien, J. Major, J. Osinski, G. Harnagel, F. Shum, D. Welch\",\"doi\":\"10.1364/slada.1995.tuc.1\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Coherent semiconductor sources based on flared amplifiers — monolithic and discrete MOPAs and flared unstable resonators have demonstrated the highest cw diffraction-limited output powers from semiconductor sources at wavelengths from 630 nm to beyond 2 μm. This talk will describe continuing advances in flared amplifier devices, including visible output powers approaching 1 W cw diffraction limited, powers up to 10 W diffraction-limited from monolithic devices, high-speed modulation, and more.\",\"PeriodicalId\":365685,\"journal\":{\"name\":\"Semiconductor Lasers Advanced Devices and Applications\",\"volume\":\"27 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1900-01-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Semiconductor Lasers Advanced Devices and Applications\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1364/slada.1995.tuc.1\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Semiconductor Lasers Advanced Devices and Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1364/slada.1995.tuc.1","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

基于喇叭形放大器的相干半导体源-单片和分立mopa以及喇叭形不稳定谐振器已经证明了半导体源在630 nm至2 μm波长范围内的最高连续波衍射限制输出功率。本次演讲将介绍喇叭放大器器件的持续发展,包括可见光输出功率接近1 W连续衍射限制,单片器件的衍射限制功率高达10 W,高速调制等。
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High Power (>1 W) Semiconductor Lasers
Coherent semiconductor sources based on flared amplifiers — monolithic and discrete MOPAs and flared unstable resonators have demonstrated the highest cw diffraction-limited output powers from semiconductor sources at wavelengths from 630 nm to beyond 2 μm. This talk will describe continuing advances in flared amplifier devices, including visible output powers approaching 1 W cw diffraction limited, powers up to 10 W diffraction-limited from monolithic devices, high-speed modulation, and more.
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