M. Young, T. Koch, U. Koren, D. Tennant, B. Miller, M. Chien, K. Feder
Wavelength division multiplexed (WDM) optical transmission requires laser sources with wavelengths closely aligned to the pass-bands of demultiplexing optical filters at the receiving end. A common and simple strategy to meet this demand is the use of wavelength-stabilized discrete sources and passive demultiplexing filters without active tracking, i.e., both the source and the demultiplexing filter being independently responsible for maintaining the wavelength channel assignment within a prescribed accuracy. Properly engineered distributed feedback (DFB) laser resonators are well-known in their ability to offer exceptionally robust longitudinal mode stability, both in their long-term resistance to mode jumps with environmental and operating condition changes, and in basic side-mode suppression characteristics. Temperature-stabilized DFB lasers have been shown to have very low (0.1nm-level) wavelength drift with aging over system life[1,2].
{"title":"Wavelength Uniformity in λ/4-Shifted DFB Laser Array WDM Transmitters","authors":"M. Young, T. Koch, U. Koren, D. Tennant, B. Miller, M. Chien, K. Feder","doi":"10.1049/EL:19951202","DOIUrl":"https://doi.org/10.1049/EL:19951202","url":null,"abstract":"Wavelength division multiplexed (WDM) optical transmission requires laser sources with wavelengths closely aligned to the pass-bands of demultiplexing optical filters at the receiving end. A common and simple strategy to meet this demand is the use of wavelength-stabilized discrete sources and passive demultiplexing filters without active tracking, i.e., both the source and the demultiplexing filter being independently responsible for maintaining the wavelength channel assignment within a prescribed accuracy. Properly engineered distributed feedback (DFB) laser resonators are well-known in their ability to offer exceptionally robust longitudinal mode stability, both in their long-term resistance to mode jumps with environmental and operating condition changes, and in basic side-mode suppression characteristics. Temperature-stabilized DFB lasers have been shown to have very low (0.1nm-level) wavelength drift with aging over system life[1,2].","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-09-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125155279","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
R. Lammert, G. M. Smith, D. Forbes, M. Osowski, J. Coleman
Optical absorption in the active region near the facets of semiconductor lasers during high-power operation may result in catastrophic optical damage (COD). Several schemes to increase the COD limited optical power have been reported. One scheme entails forming non-injection regions near the facets to reduce the nonradiative recombination at the facets [1], [2]. A disadvantage of this scheme is that the non-injection region acts as a saturable absorber which may effect the L-I curve near threshold. Another scheme to increase the output power at which COD occurs involves forming a region at the laser facets which has a higher band gap energy than the energy of the emitted laser light. One method to produce these nonabsorbing mirrors (NAMs) utilizes bent-waveguides fabricated using nonplanar substrates [3], [4]. Although this method produces NAMs with broad near-fields, the coupling of the optical field between the window region and the light-emitting region is low due to the optical beam diffracting freely in the window region. In addition, accurate cleaving is necessary to achieve the relatively short window regions needed (<15 µm). Another method to produce NAMs uses an etch and regrowth technique, but this method also allows the optical beam to diffract freely in the window region and accurate cleaving is again needed [5].
{"title":"Strained-Layer InGaAs-GaAs-AIGaAs Buried-Heterostructure Lasers with Nonabsorbing Mirrors by Selective-Area MOCVD","authors":"R. Lammert, G. M. Smith, D. Forbes, M. Osowski, J. Coleman","doi":"10.1049/EL:19950742","DOIUrl":"https://doi.org/10.1049/EL:19950742","url":null,"abstract":"Optical absorption in the active region near the facets of semiconductor lasers during high-power operation may result in catastrophic optical damage (COD). Several schemes to increase the COD limited optical power have been reported. One scheme entails forming non-injection regions near the facets to reduce the nonradiative recombination at the facets [1], [2]. A disadvantage of this scheme is that the non-injection region acts as a saturable absorber which may effect the L-I curve near threshold. Another scheme to increase the output power at which COD occurs involves forming a region at the laser facets which has a higher band gap energy than the energy of the emitted laser light. One method to produce these nonabsorbing mirrors (NAMs) utilizes bent-waveguides fabricated using nonplanar substrates [3], [4]. Although this method produces NAMs with broad near-fields, the coupling of the optical field between the window region and the light-emitting region is low due to the optical beam diffracting freely in the window region. In addition, accurate cleaving is necessary to achieve the relatively short window regions needed (<15 µm). Another method to produce NAMs uses an etch and regrowth technique, but this method also allows the optical beam to diffract freely in the window region and accurate cleaving is again needed [5].","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"37 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1995-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125264142","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1992-01-31DOI: 10.1070/QE1992V022N01ABEH003324
A. Koifman, I. V. Mart'yanova, A. Khaidarov
The effects of small doses (~ 103 - 104 rad) have not been studied sufficiently thoroughly, although these effects are of interest both from the point of view of the possibility of identification of the micromechanisms of radiation-defect formation and deliberate changes in the parameters of the structures, i.e., from the point of view of radiation technology.
{"title":"Influence of small radiation doses on the parameters of injection lasers","authors":"A. Koifman, I. V. Mart'yanova, A. Khaidarov","doi":"10.1070/QE1992V022N01ABEH003324","DOIUrl":"https://doi.org/10.1070/QE1992V022N01ABEH003324","url":null,"abstract":"The effects of small doses (~ 103 - 104 rad) have not been studied sufficiently thoroughly, although these effects are of interest both from the point of view of the possibility of identification of the micromechanisms of radiation-defect formation and deliberate changes in the parameters of the structures, i.e., from the point of view of radiation technology.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1992-01-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122206756","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
The objective of the Precision Laser Machining Technology Reinvestment Project (PLM TRP) is to develop the next generation laser machine tools and advanced manufacturing processes for both commercial and military applications. This is a government-industry cost share program sponsored by the Advanced Research Projects Agency (ARPA) to provide the most advanced and affordable US military systems, and the most competitive commercial products in the global marketplace for the automotive, aircraft/aerospace, heavy equipment, and shipbuilding industries. To accomplish the objective a Consortium of 20 organizations that represent industrial users, process developers, system integrators and technology developers has been established forming a user-driven, horizontally and vertically integrated team.
{"title":"Diode Pumped Solid State Lasers for High Power Precision Machining","authors":"L. Marabella","doi":"10.1364/slada.1995.mc.2","DOIUrl":"https://doi.org/10.1364/slada.1995.mc.2","url":null,"abstract":"The objective of the Precision Laser Machining Technology Reinvestment Project (PLM TRP) is to develop the next generation laser machine tools and advanced manufacturing processes for both commercial and military applications. This is a government-industry cost share program sponsored by the Advanced Research Projects Agency (ARPA) to provide the most advanced and affordable US military systems, and the most competitive commercial products in the global marketplace for the automotive, aircraft/aerospace, heavy equipment, and shipbuilding industries. To accomplish the objective a Consortium of 20 organizations that represent industrial users, process developers, system integrators and technology developers has been established forming a user-driven, horizontally and vertically integrated team.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116681180","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A tunable cw low-amplitude noise laser is useful in the measurement of reaction rate constants of short-lived molecules. We are using an injection-locked diode laser together with a potassium niobate (KNbO3) crystal in a build-up cavity to generate tunable blue light. The blue light is then used to measure absorption due to iodine-monoxide (IO). This molecule is believed to play a role in the atmospheric ozone cycle.1 Chemical reactions involving IO are studied by monitoring transmittance through a flow cell in the wavelength range near 427 nm. IO is produced in the cell by photolysis of I2 and ozone with an excimer laser pulse; subsequent decay of the IO concentration takes place in approximately 10 ms. To accurately measure these fast reaction rates in low concentrations, optical absorptions of less than 10-4 are monitored with a 40 kHz bandwidth. Amplitude stabilization of the doubled light is necessary and is implimented with an electro-optic modulator.
{"title":"Transient Molecular Spectroscopy with a Frequency-Doubled Diode Laser","authors":"R. Fox, M. Hunter, L. Hollberg","doi":"10.1364/slada.1995.mb.2","DOIUrl":"https://doi.org/10.1364/slada.1995.mb.2","url":null,"abstract":"A tunable cw low-amplitude noise laser is useful in the measurement of reaction rate constants of short-lived molecules. We are using an injection-locked diode laser together with a potassium niobate (KNbO3) crystal in a build-up cavity to generate tunable blue light. The blue light is then used to measure absorption due to iodine-monoxide (IO). This molecule is believed to play a role in the atmospheric ozone cycle.1 Chemical reactions involving IO are studied by monitoring transmittance through a flow cell in the wavelength range near 427 nm. IO is produced in the cell by photolysis of I2 and ozone with an excimer laser pulse; subsequent decay of the IO concentration takes place in approximately 10 ms. To accurately measure these fast reaction rates in low concentrations, optical absorptions of less than 10-4 are monitored with a 40 kHz bandwidth. Amplitude stabilization of the doubled light is necessary and is implimented with an electro-optic modulator.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128339788","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We review the key market and technological requirements on semiconductor lasers for commercial applications in telecommunications. We will cover high volume applications for access systems as well as high-reliability and high-performance requirements.
{"title":"Market Requirements on Semiconductor Lasers for Telecommunications","authors":"N. Olsson, R. L. Hartman, D. Wilt","doi":"10.1364/slada.1995.wa.1","DOIUrl":"https://doi.org/10.1364/slada.1995.wa.1","url":null,"abstract":"We review the key market and technological requirements on semiconductor lasers for commercial applications in telecommunications. We will cover high volume applications for access systems as well as high-reliability and high-performance requirements.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"26 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121467483","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.pdp.2
A. Schönfelder, S. Weisser, K. Czotscher, E. Larkins, W. Benz, J. Daleiden-, J. Fleissner, M. Maier, J. Ralston, J. Rosenzweig
We demonstrate, for the first time, direct modulation bandwidths exceeding 40 GHz in short-cavity In0.35Ga0.65As/GaAs multiple-quantum-well laser diodes. Low linewidth enhancement factors (α = 1.4) have been extracted, indicating reduced laser chirp under high-speed direct modulation.
{"title":"Record small-signal direct modulation bandwidths up to 40 GHz and low chirp characteristics (α = 1.4) in short-cavity strained In0.35Ga0.65As/GaAs MQW laser diodes","authors":"A. Schönfelder, S. Weisser, K. Czotscher, E. Larkins, W. Benz, J. Daleiden-, J. Fleissner, M. Maier, J. Ralston, J. Rosenzweig","doi":"10.1364/slada.1995.pdp.2","DOIUrl":"https://doi.org/10.1364/slada.1995.pdp.2","url":null,"abstract":"We demonstrate, for the first time, direct modulation bandwidths exceeding 40 GHz in short-cavity In0.35Ga0.65As/GaAs multiple-quantum-well laser diodes. Low linewidth enhancement factors (α = 1.4) have been extracted, indicating reduced laser chirp under high-speed direct modulation.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"121 4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126321302","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
U. Öhlander, O. Sahlen, O. Kjebon, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, L. Bäckbom
Strained-layer quantum well (QW) technology allows band-engineered active material to improve threshold current and output power [1], speed [2-4], chirp [2] and temperature performance [5]. A distributed Bragg reflector (DBR) section can be used to obtain longitudinal single-mode operation [6] and improve temperature performance [7]. High-reflectivity (HR) coatings can be employed for better temperature performance [7] and threshold current [1]. We report a combination of DBR rear section, short-cavity QW active section and HR-coated front facet, which improves the properties for direct modulation.
{"title":"Strain-compensated 1.55 μm DBR lasers for operation at high speed with low drive current","authors":"U. Öhlander, O. Sahlen, O. Kjebon, S. Lourdudoss, J. Wallin, K. Streubel, S. Nilsson, L. Bäckbom","doi":"10.1364/slada.1995.ma.2","DOIUrl":"https://doi.org/10.1364/slada.1995.ma.2","url":null,"abstract":"Strained-layer quantum well (QW) technology allows band-engineered active material to improve threshold current and output power [1], speed [2-4], chirp [2] and temperature performance [5]. A distributed Bragg reflector (DBR) section can be used to obtain longitudinal single-mode operation [6] and improve temperature performance [7]. High-reflectivity (HR) coatings can be employed for better temperature performance [7] and threshold current [1]. We report a combination of DBR rear section, short-cavity QW active section and HR-coated front facet, which improves the properties for direct modulation.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132343703","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tub.3
D. Cornwell, A. Yu, G. Hamagel, D. Hopf, P. Millar
The next generation of space-based instruments for NASA will be smaller and more efficient than ever before. In keeping with this requirement, LIDAR and laser ranging systems are being developed which are based on AlGaAs semiconductor laser diodes [1, 2]. These systems use pseudo-random noise (PN) intensity modulation of the laser in conjunction with a correlation receiver to improve the overall system sensitivity and allow the inherently low-power diode laser to compete with much higher power solid state and gas lasers. While the size and efficiency of diode lasers make them attractive for such applications, the high-power, quasi-CW intensity modulation of these devices can introduce deleterious effects, such as spectral linewidth broadening. In addition, the highly-divergent beams from diode lasers require fast (F/1) optical systems, which in turn place micron-level tolerances on their opto-mechanical alignment and packaging. We present here the design and performance of a high-power diode laser transmitter which addresses the problem of spectral broadening under large-signal intensity modulation and also the problem of micron-level tolerance opto-mechanical packaging. The laser transmitter is a candidate for an aerosol LIDAR system currently operating at the South Pole, and may also enable future NASA laser ranging and communication systems.
{"title":"High-Power Diode Laser Transmitter for Aerosol LIDAR and Laser Ranging","authors":"D. Cornwell, A. Yu, G. Hamagel, D. Hopf, P. Millar","doi":"10.1364/slada.1995.tub.3","DOIUrl":"https://doi.org/10.1364/slada.1995.tub.3","url":null,"abstract":"The next generation of space-based instruments for NASA will be smaller and more efficient than ever before. In keeping with this requirement, LIDAR and laser ranging systems are being developed which are based on AlGaAs semiconductor laser diodes [1, 2]. These systems use pseudo-random noise (PN) intensity modulation of the laser in conjunction with a correlation receiver to improve the overall system sensitivity and allow the inherently low-power diode laser to compete with much higher power solid state and gas lasers. While the size and efficiency of diode lasers make them attractive for such applications, the high-power, quasi-CW intensity modulation of these devices can introduce deleterious effects, such as spectral linewidth broadening. In addition, the highly-divergent beams from diode lasers require fast (F/1) optical systems, which in turn place micron-level tolerances on their opto-mechanical alignment and packaging. We present here the design and performance of a high-power diode laser transmitter which addresses the problem of spectral broadening under large-signal intensity modulation and also the problem of micron-level tolerance opto-mechanical packaging. The laser transmitter is a candidate for an aerosol LIDAR system currently operating at the South Pole, and may also enable future NASA laser ranging and communication systems.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"135 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131654938","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 1900-01-01DOI: 10.1364/slada.1995.tud.5
T. Wipiejewski, M. Peters, B. Thibeault, D. Young, L. Coldren
Vertical-cavity surface-emitting lasers (VCSELs) are gaining increasing attention due to their interesting properties. The ultimate device performance of VCSELs has exceeded in-plane laser data already regarding minimum threshold currents [1] and highest wall plug efficiency except for high output power pump lasers [2]. Whereas VCSELs are poised to prove their usefulness in short distance data link applications, high efficiency lasers are also attractive for high power applications like laser diode pumped solid state lasers. In general, the maximum output power of VCSELs is thermally limited. Improved heat sinking is therefore necessary to increase the maximum output power. A record high output power of 113 mW has been previously demonstrated with an up-side down mounting of a single VCSEL on a diamond heat sink [3]. Here we show how the thermal heat sinking in a 2D laser array can be improved by using a Au-plated heat spreading layer. The improved heat sinking results in an increase in maximum output power from 20 mW to 42 mW for a 64 µm diameter device. To our knowledge this is the highest output power for an unmounted VCSEL reported to date.
{"title":"High Power Highly Efficient Vertical-Cavity Surface-Emitting Laser Diodes with a Au-Plated Heat Spreading Layer","authors":"T. Wipiejewski, M. Peters, B. Thibeault, D. Young, L. Coldren","doi":"10.1364/slada.1995.tud.5","DOIUrl":"https://doi.org/10.1364/slada.1995.tud.5","url":null,"abstract":"Vertical-cavity surface-emitting lasers (VCSELs) are gaining increasing attention due to their interesting properties. The ultimate device performance of VCSELs has exceeded in-plane laser data already regarding minimum threshold currents [1] and highest wall plug efficiency except for high output power pump lasers [2]. Whereas VCSELs are poised to prove their usefulness in short distance data link applications, high efficiency lasers are also attractive for high power applications like laser diode pumped solid state lasers. In general, the maximum output power of VCSELs is thermally limited. Improved heat sinking is therefore necessary to increase the maximum output power. A record high output power of 113 mW has been previously demonstrated with an up-side down mounting of a single VCSEL on a diamond heat sink [3]. Here we show how the thermal heat sinking in a 2D laser array can be improved by using a Au-plated heat spreading layer. The improved heat sinking results in an increase in maximum output power from 20 mW to 42 mW for a 64 µm diameter device. To our knowledge this is the highest output power for an unmounted VCSEL reported to date.","PeriodicalId":365685,"journal":{"name":"Semiconductor Lasers Advanced Devices and Applications","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133745262","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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