B. Verbruggen, K. Deguchi, Badr Malki, J. Craninckx
{"title":"基于28nm数字CMOS的70db SNDR 200ms /s 2.3 mW动态流水线SAR ADC","authors":"B. Verbruggen, K. Deguchi, Badr Malki, J. Craninckx","doi":"10.1109/VLSIC.2014.6858451","DOIUrl":null,"url":null,"abstract":"We present a 200 MS/s 2x interleaved 14 bit pipelined SAR ADC in 28nm digital CMOS. The ADC uses a new residue amplifier for low noise at low power, and incorporates interleaved channel time-constant calibration. The ADC achieves a peak SNDR of 70.7 dB at 200 MS/s while consuming 2.3 mW from an 0.9 V supply.","PeriodicalId":381216,"journal":{"name":"2014 Symposium on VLSI Circuits Digest of Technical Papers","volume":"326 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-06-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"81","resultStr":"{\"title\":\"A 70 dB SNDR 200 MS/s 2.3 mW dynamic pipelined SAR ADC in 28nm digital CMOS\",\"authors\":\"B. Verbruggen, K. Deguchi, Badr Malki, J. Craninckx\",\"doi\":\"10.1109/VLSIC.2014.6858451\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We present a 200 MS/s 2x interleaved 14 bit pipelined SAR ADC in 28nm digital CMOS. The ADC uses a new residue amplifier for low noise at low power, and incorporates interleaved channel time-constant calibration. The ADC achieves a peak SNDR of 70.7 dB at 200 MS/s while consuming 2.3 mW from an 0.9 V supply.\",\"PeriodicalId\":381216,\"journal\":{\"name\":\"2014 Symposium on VLSI Circuits Digest of Technical Papers\",\"volume\":\"326 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-06-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"81\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2014 Symposium on VLSI Circuits Digest of Technical Papers\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/VLSIC.2014.6858451\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2014 Symposium on VLSI Circuits Digest of Technical Papers","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIC.2014.6858451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A 70 dB SNDR 200 MS/s 2.3 mW dynamic pipelined SAR ADC in 28nm digital CMOS
We present a 200 MS/s 2x interleaved 14 bit pipelined SAR ADC in 28nm digital CMOS. The ADC uses a new residue amplifier for low noise at low power, and incorporates interleaved channel time-constant calibration. The ADC achieves a peak SNDR of 70.7 dB at 200 MS/s while consuming 2.3 mW from an 0.9 V supply.