A relation model of yield and reliability for the gate oxide failures

Yield and reliability are two important factors affecting the profitability of semiconductor manufacturing. By using the relationship between yield and reliability, which is based on the defect reliability physics, and combining this with fault coverage, the authors develop a model to predict the gate oxide reliability of integrated circuits (ICs). This model explains well some previous experimental results performed to verify the relationship between yield and reliability and will help identify extrinsic failure mechanisms or electrical degradation caused by defects.